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NTS4173PT1G
+StücklisteMOSFET P-CH 30V 1.2A SC70-3
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HerstellerOnsemi
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Herstellerteil #NTS4173PT1G
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Auf Lager3979
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Spezifikationen
| Attribut | Wert |
| Part Status | Active |
| Base Product Number | NTS4173 |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30 V |
| Current - Continuous Drain (Id) @ 25°C | 1.2A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 10V |
| Rds On (Max) @ Id, Vgs | 150mOhm @ 1.2A, 10V |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 10.1 nC @ 10 V |
| Vgs (Max) | ±12V |
| Input Capacitance (Ciss) (Max) @ Vds | 430 pF @ 15 V |
| Power Dissipation (Max) | 290mW (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | SC-70-3 (SOT323) |
| Package / Case | SC-70, SOT-323 |
| Packaging | Cut Tape (CT), Tape & Reel (TR) |
Übersicht
Description
The NTS4173PT1G is a P-channel MOSFET from ON Semiconductor, designed for power management applications. Key features include:
- Low On-Resistance (RDS(on)): Enhances efficiency in switching circuits.
- Compact Package (SOT-23): Ideal for space-constrained designs.
- Low Gate Charge: Enables fast switching, reducing power loss.
- Voltage Rating: -30V drain-to-source (VDS), suitable for low-voltage systems.
Common uses include load switching, battery protection, and DC-DC conversion in portable electronics, IoT devices, and power supplies. Its small form factor and performance make it a popular choice for energy-efficient designs.
For detailed specs, refer to the datasheet from ON Semiconductor.
- Low On-Resistance (RDS(on)): Enhances efficiency in switching circuits.
- Compact Package (SOT-23): Ideal for space-constrained designs.
- Low Gate Charge: Enables fast switching, reducing power loss.
- Voltage Rating: -30V drain-to-source (VDS), suitable for low-voltage systems.
Common uses include load switching, battery protection, and DC-DC conversion in portable electronics, IoT devices, and power supplies. Its small form factor and performance make it a popular choice for energy-efficient designs.
For detailed specs, refer to the datasheet from ON Semiconductor.
Equivalent
Equivalent products to the NTS4173PT1G (dual N-channel MOSFET) include:
- DMN2019LSDW (Diodes Incorporated)
- BSS138DW (Nexperia, Diodes Inc.)
- 2N7002DW (Multiple manufacturers)
- FDC6326C (Fairchild/ON Semi)
These are dual N-channel MOSFETs with similar specifications (logic-level, SOT-363/SC-88 packages). Verify exact parameters (Vds, Id, Rds(on)) for compatibility.
- DMN2019LSDW (Diodes Incorporated)
- BSS138DW (Nexperia, Diodes Inc.)
- 2N7002DW (Multiple manufacturers)
- FDC6326C (Fairchild/ON Semi)
These are dual N-channel MOSFETs with similar specifications (logic-level, SOT-363/SC-88 packages). Verify exact parameters (Vds, Id, Rds(on)) for compatibility.
Features
The NTS4173PT1G is a dual N-channel enhancement-mode MOSFET array designed for general-purpose switching applications. Key features include:
- Low Threshold Voltage: Typically 0.7V, enabling efficient low-voltage operation.
- Low On-Resistance (RDS(on)): 5Ω max at VGS = 4.5V, reducing power loss.
- Compact Package: SOT-363 (SC-88) for space-constrained designs.
- Dual MOSFET Configuration: Two independent N-channel MOSFETs in a single package.
- Fast Switching Speed: Suitable for high-frequency applications.
- Low Gate Charge: Enhances efficiency in switching circuits.
- Wide Operating Range: VDS = 20V, VGS = ±8V, ID = 200mA (per MOSFET).
Ideal for load switching, signal routing, and portable electronics due to its small size and low power requirements.
- Low Threshold Voltage: Typically 0.7V, enabling efficient low-voltage operation.
- Low On-Resistance (RDS(on)): 5Ω max at VGS = 4.5V, reducing power loss.
- Compact Package: SOT-363 (SC-88) for space-constrained designs.
- Dual MOSFET Configuration: Two independent N-channel MOSFETs in a single package.
- Fast Switching Speed: Suitable for high-frequency applications.
- Low Gate Charge: Enhances efficiency in switching circuits.
- Wide Operating Range: VDS = 20V, VGS = ±8V, ID = 200mA (per MOSFET).
Ideal for load switching, signal routing, and portable electronics due to its small size and low power requirements.
Pinout
The NTS4173PT1G is a dual PNP resistor-equipped transistor (RET) in a SOT-416 (SC-75) package.
- Pin Count: 3 pins (Emitter 1, Base 1, Collector 1 | Emitter 2, Base 2, Collector 2).
- Function:
- Contains two independent PNP transistors, each with integrated base-emitter resistors.
- Used for signal switching, amplification, and digital logic interfacing in compact designs.
- Common applications include load switching, level shifting, and inverter circuits.
Key features:
- Low voltage operation (VCEO = -50V).
- Integrated resistors simplify circuit design.
- Small footprint for space-constrained PCBs.
- Pin Count: 3 pins (Emitter 1, Base 1, Collector 1 | Emitter 2, Base 2, Collector 2).
- Function:
- Contains two independent PNP transistors, each with integrated base-emitter resistors.
- Used for signal switching, amplification, and digital logic interfacing in compact designs.
- Common applications include load switching, level shifting, and inverter circuits.
Key features:
- Low voltage operation (VCEO = -50V).
- Integrated resistors simplify circuit design.
- Small footprint for space-constrained PCBs.
Manufacturer
The NTS4173PT1G is manufactured by ON Semiconductor, a leading global supplier of semiconductor-based solutions.
ON Semiconductor specializes in energy-efficient innovations, offering a wide range of products, including power management, analog, and discrete semiconductors for automotive, industrial, and consumer markets. The company is known for high-reliability components and serves diverse industries with a focus on sustainability and efficiency.
The NTS4173PT1G is a PNP transistor designed for switching and amplification applications.
ON Semiconductor specializes in energy-efficient innovations, offering a wide range of products, including power management, analog, and discrete semiconductors for automotive, industrial, and consumer markets. The company is known for high-reliability components and serves diverse industries with a focus on sustainability and efficiency.
The NTS4173PT1G is a PNP transistor designed for switching and amplification applications.
Application
The NTS4173PT1G is a PNP transistor commonly used in:
- Switching circuits (load control, relays)
- Amplification (audio, signal processing)
- Power management (voltage regulation, inverters)
- Consumer electronics (LED drivers, power supplies)
- Automotive systems (sensors, lighting control)
Its low saturation voltage and high current capability make it suitable for efficient power handling in compact designs.
- Switching circuits (load control, relays)
- Amplification (audio, signal processing)
- Power management (voltage regulation, inverters)
- Consumer electronics (LED drivers, power supplies)
- Automotive systems (sensors, lighting control)
Its low saturation voltage and high current capability make it suitable for efficient power handling in compact designs.
Package
The NTS4173PT1G is a SOT-23-3 (TO-236) surface-mount package. It is a small, 3-pin plastic package commonly used for transistors and small ICs, measuring approximately 2.9mm x 1.3mm x 1.1mm. Suitable for compact PCB designs.
