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NTTFS4C10NTAG
+StücklisteMOSFET N-CH 30V 8.2A/44A 8WDFN
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HerstellerOnsemi
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Herstellerteil #NTTFS4C10NTAG
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Datenblatt NTTFS4C10NTAG DataSheet
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Auf Lager8394
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Spezifikationen
| Attribut | Wert |
| Supplier | onsemi |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30 V |
| Current - Continuous Drain(Id) @ 25°C | 8.2A (Ta), 44A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 4.5V, 10V |
| Rds On(Max) @ Id Vgs | 7.4mOhm @ 30A, 10V |
| Vgs(th)(Max) @ Id | 2.2V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 18.6 nC @ 10 V |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 993 pF @ 15 V |
| Power Dissipation (Max) | 790mW (Ta), 23.6W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 8-WDFN (3.3x3.3) |
Übersicht
Description
If you are referring to something more specific, such as a course title or code, it might be designed to introduce a particular concept, technology, or system. For instance, NTTFS could stand for a technical term or acronym relevant to the field of study, while the numbers or letters might indicate a course level or section. Without further context, it's challenging to provide a precise summary. To learn more, it would be best to consult the course syllabus, catalog, or contact the institution or organization offering the course for detailed information.
Equivalent
Features
1. Voltage Rating: It typically handles a maximum drain-source voltage (V_DS) of around 100V.
2. Current Capacity: It supports a continuous drain current (I_D) that can range up to 41A, which is useful for high-power applications.
3. R_DS(on): This MOSFET offers a low on-resistance, often in the range of 4.3 mΩ, minimizing power losses and heat generation.
4. Package Type: Often comes in a compact and robust package, such as TO-263 or similar, making it suitable for surface mounting.
5. Thermal Performance: Designed to handle significant thermal stress with efficient heat dissipation characteristics, sometimes incorporating advanced material technologies.
6. Efficiency: Optimized for high efficiency in switching applications, making it suitable for use in power management systems.
7. Applications: Commonly used in power supplies, motor drives, DC-DC converters, and other high-speed switching applications.
These features make the NTTFS4C10NTAG ideal for applications requiring reliability and efficiency in power management.
Pinout
1. Gate (G): This pin is used to control the MOSFET. By applying a voltage to the gate relative to the source, you can turn the MOSFET on or off.
2. Drain (D): This is the pin through which the current flows from the drain to the source when the MOSFET is in the on state.
3. Source (S): This pin serves as the reference point for the gate voltage and is the point from which current exits the MOSFET when it is conducting.
This configuration is typical for MOSFETs, where the gate voltage controls the connection between the drain and source, allowing the device to function as an electronic switch. The DSN5060-3 package is designed to provide efficient thermal performance and compact size.
Manufacturer
Application
1. Power Supply Circuits: Enhances efficiency in DC-DC converters and power supply units.
2. Motor Control: Used in motor drivers for precision control in industrial and consumer electronics.
3. Automotive Systems: Suitable for automotive applications due to its robustness and reliability.
4. LED Lighting: Supports efficient LED driver circuits.
5. Consumer Electronics: Utilized in devices requiring efficient power management like laptops and smartphones.
These applications leverage its fast switching capabilities, low on-resistance, and high efficiency.