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NTZD3155CT2G
+StücklisteMOSFET N/P-CH 20V SOT-563
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HerstellerOnsemi
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Herstellerteil #NTZD3155CT2G
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Paket SOT-563
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Auf Lager6954
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Spezifikationen
| Attribut | Wert |
| Package | Tape & Reel (TR),Cut Tape (CT) |
| ProductStatus | Active |
| FETType | N and P-Channel |
| FETFeature | Logic Level Gate |
| DraintoSourceVoltage(Vdss) | 20V |
| Current-ContinuousDrain(Id)@25°C | 540mA, 430mA |
| RdsOn(Max)@IdVgs | 550mOhm @ 540mA, 4.5V |
| Vgs(th)(Max)@Id | 1V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 2.5nC @ 4.5V |
| InputCapacitance(Ciss)(Max)@Vds | 150pF @ 16V |
| Power-Max | 250mW |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| Package/Case | SOT-563, SOT-666 |
Übersicht
Description
It comes in a compact SOT-563 package that is suitable for space-constrained applications. The device operates at a maximum drain-source voltage (V_DS) of 20V and can handle a continuous drain current (I_D) of approximately 1A per channel. Its low threshold voltage makes it compatible with low-voltage logic levels, allowing for easy interfacing with microcontrollers and other digital devices.
The NTZD3155CT2G is appreciated for its robustness and reliability, making it a popular choice in consumer electronics, communication devices, and industrial applications where efficient power management is crucial. Always refer to the datasheet for detailed specifications and design considerations.
Equivalent
1. Si2302DS - From Vishay, an N-channel MOSFET with similar specifications.
2. BSN20 - From NXP, another dual N-channel MOSFET alternative.
3. 2N7002 - From various manufacturers like ON Semiconductor and Fairchild, offering comparable electrical characteristics.
These equivalents should be verified for specific parameter matches and package compatibility in your application.
Features
1. Dual N-Channel Configuration: The device integrates two N-channel MOSFETs in a single package, suitable for compact circuit designs.
2. Low On-Resistance: It features a low on-state resistance, which ensures efficient current flow and minimal power loss.
3. High-Speed Switching: The MOSFET supports rapid switching speeds, making it ideal for fast-paced electronic circuits.
4. Compact Package: Typically available in a small package, such as SOT-563, which is ideal for space-constrained applications.
5. Low Gate Charge: This characteristic allows for efficient driving, reducing the energy required to switch the device.
6. Applications: Commonly used in load switching, battery management, DC-DC converters, and power management systems.
These features make the NTZD3155CT2G a versatile component for use in various portable and power-sensitive devices.
Pinout
The package for the NTZD3155CT2G is a 6-pin TSOP-6 (also known as SOT-23-6). The pin configuration is as follows:
1. Pin 1 (G1): Gate of the first N-channel MOSFET.
2. Pin 2 (S1): Source of the first N-channel MOSFET.
3. Pin 3 (D2): Drain of the second N-channel MOSFET.
4. Pin 4 (S2): Source of the second N-channel MOSFET.
5. Pin 5 (G2): Gate of the second N-channel MOSFET.
6. Pin 6 (D1): Drain of the first N-channel MOSFET.
This MOSFET is suitable for applications requiring efficient switching and low on-resistance, providing an excellent solution for space-constrained environments.
Manufacturer
Application
1. DC-DC Converters: Utilized in switching regulators for efficient voltage conversion.
2. Load Switching: Suitable for controlling power in portable devices.
3. Battery Management: Used in protection circuits for battery-powered devices.
4. Signal Switching: Useful in applications that require fast switching capabilities.
5. Automotive Electronics: Employed in various control systems for vehicles.
6. Consumer Electronics: Found in devices like smartphones and laptops for power management.
The dual MOSFET design allows for compact and efficient circuit designs in these applications.