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NVMFD5C466NLT1G
+StücklisteMOSFET 2N-CH 40V 52A S08FL
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HerstellerOnsemi
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Herstellerteil #NVMFD5C466NLT1G
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Paket TDFN-8
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Spezifikationen
| Attribut | Wert |
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | Automotive, AEC-Q101 |
| ProductStatus | Active |
| FETType | 2 N-Channel (Dual) |
| FETFeature | Standard |
| DraintoSourceVoltage(Vdss) | 40V |
| Current-ContinuousDrain(Id)@25°C | 14A (Ta), 52A (Tc) |
| RdsOn(Max)@IdVgs | 7.4mOhm @ 10A, 10V |
| Vgs(th)(Max)@Id | 2.2V @ 30µA |
| GateCharge(Qg)(Max)@Vgs | 7nC @ 4.5V |
| InputCapacitance(Ciss)(Max)@Vds | 997pF @ 25V |
| Power-Max | 3W (Ta), 40W (Tc) |
| OperatingTemperature | -55°C ~ 175°C (TJ) |
| MountingType | Surface Mount |
| Package/Case | 8-PowerTDFN |
Übersicht
Description
- Voltage Rating: 60V
- Current Rating: 50A (continuous)
- Low On-Resistance (RDS(on)): 5.5mΩ (max) @ 10V
- Fast Switching: Optimized for high-frequency operation
- Package: DFN5x6 (5mm x 6mm), offering compact size and good thermal performance
Ideal for DC-DC converters, motor control, and load switching in automotive, industrial, and consumer electronics. Its low RDS(on) minimizes conduction losses, improving efficiency.
For detailed specs, refer to the datasheet.
Equivalent
- IRL40B209 (Infineon)
- BSC190N15NS3 (Infineon)
- CSD19536KCS (Texas Instruments)
- SI7850DP-T1-GE3 (Vishay)
These alternatives offer similar voltage/current ratings and package compatibility. Always verify datasheet specs for exact suitability.
Features
- Voltage Rating: 60V
- Current Rating: 50A (continuous)
- Low On-Resistance (RDS(on)): 4.6mΩ (max at VGS=10V)
- Fast Switching: Optimized for high-efficiency power applications
- Package: TO-252 (DPAK), surface-mount design
- Gate Charge (Qg): Low for reduced switching losses
- Avalanche Energy Rated: Enhances ruggedness in harsh conditions
Ideal for power management, DC-DC converters, motor control, and battery protection circuits.
Pinout
Pin Functions:
1. Pin 1 (Gate 1): Controls the first MOSFET.
2. Pin 2 (Source 1): Source terminal for the first MOSFET.
3. Pin 3 (Drain 1): Drain terminal for the first MOSFET.
4. Pin 4 (Drain 2): Drain terminal for the second MOSFET.
5. Pin 5 (Source 2): Source terminal for the second MOSFET.
6. Pin 6 (Gate 2): Controls the second MOSFET.
Key Features:
- 30V drain-source voltage (VDS)
- Low on-resistance (RDS(on))
- Compact DFN-6 package
This device is commonly used in power management, load switching, and DC-DC conversion.
