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NVMFS005N10MCLT1G
+StücklistePTNG 100V LL SO8FL
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HerstellerOnsemi
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Herstellerteil #NVMFS005N10MCLT1G
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Datenblatt NVMFS005N10MCLT1G DataSheet
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Spezifikationen
| Attribut | Wert |
| Supplier | onsemi |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Series | Automotive, AEC-Q101 |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100 V |
| Current - Continuous Drain(Id) @ 25°C | 18.4A (Ta), 108A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 4.5V, 10V |
| Rds On(Max) @ Id Vgs | 5.1mOhm @ 34A, 10V |
| Vgs(th)(Max) @ Id | 3V @ 192µA |
| Gate Charge(Qg)(Max) @ Vgs | 55 nC @ 10 V |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 4100 pF @ 50 V |
| Power Dissipation (Max) | 3.8W (Ta), 131W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 5-DFN (5x6) (8-SOFL) |
Übersicht
Description
Key features of this MOSFET include low on-resistance and high-speed switching capabilities, making it suitable for power management tasks in various electronic circuits, such as DC-DC converters, load switches, and motor drives. The device is designed to operate efficiently in low-voltage applications and offers robustness with its ESD (Electrostatic Discharge) protection.
The "G" at the end of the part number indicates that it is RoHS compliant, meaning it adheres to restrictions on hazardous substances, making it environmentally friendly. This MOSFET typically comes in a surface-mount package, facilitating easy integration into compact and high-density circuit boards.
Equivalent
1. Infineon's IPD90N10S4L-03
2. Vishay's SI7460DP
3. STMicroelectronics' STL50N10F7
When selecting an equivalent, ensure compatibility in key parameters like RDS(on), VDS, ID, and package type. Always verify with the manufacturer's datasheet for precise matching.
Features
1. Low On-Resistance: Offers a low R_DS(on), which minimizes power loss and enhances efficiency.
2. Compact Package: Available in a compact SOT-23 package, making it suitable for space-constrained applications.
3. High-Speed Switching: Designed for fast switching speeds, improving performance in high-frequency applications.
4. Thermal Performance: Provides effective thermal management, ensuring reliable operation under varying thermal conditions.
5. Voltage Rating: Typically supports a maximum drain-source voltage suitable for various applications, enhancing versatility.
6. Current Handling: Capable of handling significant current levels, making it ideal for power applications.
7. RoHS Compliant: Environmentally friendly with compliance to Restriction of Hazardous Substances directives.
This MOSFET is widely used in power management applications, including DC-DC converters, load switches, and other consumer electronics due to its robust performance and efficient operation.
Pinout
1. Gate (G): Used to control the MOSFET, turning it on or off.
2. Drain (D): The terminal through which current flows when the MOSFET is on.
3. Source (S): The terminal from which current enters into the MOSFET.
The SO-8FL package is designed to provide enhanced thermal performance, and the MOSFET itself is optimized for low on-resistance, making it suitable for high-efficiency applications. Be sure to consult the datasheet for precise details on pin configuration and electrical characteristics.