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NVMFS5C430NLWFT1G
+StücklisteMOSFET N-CH 40V 200A 5DFN
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HerstellerOnsemi
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Herstellerteil #NVMFS5C430NLWFT1G
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Paket TDFN-8
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Auf Lager6049
365 Tage Qualitätsgarantie
7*24 Stunden-Servicegarantie
90-Tage Kundendienstgarantie
Originalproduktgarantie
Spezifikationen
| Attribut | Wert |
| Package / Case | Tape & Reel (TR) |
| Series | Automotive, AEC-Q101 |
| Part Status | Discontinued at Digi-Key |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 40 V |
| Current - Continuous Drain(Id) @ 25°C | 200A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 4.5V, 10V |
| Rds On(Max) @ Id Vgs | 1.5mOhm @ 50A, 10V |
| Vgs(th)(Max) @ Id | 2V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 70 nC @ 10 V |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 4300 pF @ 20 V |
| Power Dissipation (Max) | 3.8W (Ta), 110W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 5-DFN (5x6) (8-SOFL) |
Übersicht
Description
This MOSFET is designed to handle substantial current and voltage levels, making it ideal for use in power converters, motor controllers, battery management systems, and other high-performance electronics. The suffix "G" generally indicates it is a lead-free or RoHS-compliant part, aligning with environmental standards. The device's packaging (indicated by "NLWFT1G") determines its suitability for surface-mount applications, offering advantages like compactness and ease of integration into PCB assemblies.
Key specifications typically include drain-source voltage, continuous drain current, gate threshold voltage, and thermal resistance parameters. Always refer to the manufacturer's datasheet for detailed technical information and to ensure compatibility with your specific application requirements.
Equivalent
1. Infineon's BSC080N06NS
2. Vishay's SI7336ADP
3. STMicroelectronics' STL120N10F7
Always verify the electrical specifications and package types to ensure compatibility.
Features
1. Technology: It uses advanced PowerTrench® MOSFET technology for enhanced performance.
2. Configuration: N-channel MOSFET offering low on-resistance.
3. Voltage and Current Ratings: It typically supports a drain-source voltage (V_DS) of 30V and a continuous drain current (I_D) of up to 62A.
4. Low R_DS(on): Features a low on-resistance, which enhances efficiency by reducing power losses.
5. Thermal Performance: Excellent thermal management capabilities for higher reliability.
6. Package: Comes in a compact and thermally efficient SO-8FL package.
7. Applications: Ideal for load switching, DC-DC converters, motor drives, and power management in portable devices.
8. Protection Features: Built-in ESD protection capabilities for increased device robustness.
These features make the NVMFS5C430NLWFT1G suitable for high-performance and space-constrained applications in various electronic devices.
Pinout
In terms of pin configuration, the typical allocation would include:
- Drain (D): Usually multiple pins connected to the drain to handle higher current.
- Source (S): Pins connected to the source terminal.
- Gate (G): Control pin used to turn the MOSFET on and off.
For precise pin count and detailed functions, refer to the datasheet provided by the manufacturer, ON Semiconductor, as the above description is a general guideline.
Manufacturer
Application
1. Power Supply Units: Used in power conversion circuits for efficient energy transfer.
2. DC-DC Converters: Ideal for voltage regulation in various electronic devices.
3. Motor Drives: Suitable for controlling motor speed and torque in industrial and automotive applications.
4. Battery Management Systems: Assists in efficient charging and discharging of batteries.
5. Consumer Electronics: Ensures efficient power delivery in devices like laptops and smartphones.
6. Telecommunications: Supports power regulation in network equipment and infrastructure.
These applications leverage its low on-resistance and fast switching capabilities for improved performance and energy efficiency.