Abbildungen dienen nur als Referenz
NVMFS6H852NLT1G
+StücklisteMOSFET N-CH 80V 11A/42A 5DFN
-
HerstellerOnsemi
-
Herstellerteil #NVMFS6H852NLT1G
-
Datenblatt NVMFS6H852NLT1G DataSheet
-
Auf Lager13803
365 Tage Qualitätsgarantie
7*24 Stunden-Servicegarantie
90-Tage Kundendienstgarantie
Originalproduktgarantie
Spezifikationen
| Attribut | Wert |
| Supplier | onsemi |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Series | Automotive, AEC-Q101 |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 80 V |
| Current - Continuous Drain(Id) @ 25°C | 11A (Ta), 42A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 4.5V, 10V |
| Rds On(Max) @ Id Vgs | 13.1mOhm @ 10A, 10V |
| Vgs(th)(Max) @ Id | 2V @ 45µA |
| Gate Charge(Qg)(Max) @ Vgs | 17 nC @ 10 V |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 906 pF @ 40 V |
| Power Dissipation (Max) | 3.6W (Ta), 54W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 5-DFN (5x6) (8-SOFL) |
Übersicht
Description
The NVMFS6H852NLT1G is a power MOSFET (Metal Oxide Semiconductor Field-Effect Transistor) designed for high-efficiency power management applications. It is part of ON Semiconductor's lineup, featuring advanced technology for improved switching performance and reduced power loss. This MOSFET is typically used in applications requiring efficient load switching and power conversion, such as power supplies, motor drives, and other high-current circuits.
Key features of the NVMFS6H852NLT1G include low on-resistance, which minimizes heat generation and energy loss, and high-speed switching capabilities, enhancing overall circuit efficiency. The device is available in a compact package, making it suitable for space-constrained designs. It is built to withstand significant voltage and current, offering reliability and durability in demanding environments.
The NVMFS6H852NLT1G is favored for its balance of performance, size, and efficiency, playing a critical role in optimizing power delivery and enhancing the performance of electronic systems.
Key features of the NVMFS6H852NLT1G include low on-resistance, which minimizes heat generation and energy loss, and high-speed switching capabilities, enhancing overall circuit efficiency. The device is available in a compact package, making it suitable for space-constrained designs. It is built to withstand significant voltage and current, offering reliability and durability in demanding environments.
The NVMFS6H852NLT1G is favored for its balance of performance, size, and efficiency, playing a critical role in optimizing power delivery and enhancing the performance of electronic systems.
Equivalent
The NVMFS6H852NLT1G is a Power MOSFET from ON Semiconductor. Equivalent products would include similar N-channel MOSFETs with comparable voltage and current ratings, low Rds(on), and similar package types. Possible equivalents might include models from manufacturers like Infineon, Vishay, and STMicroelectronics, such as the Infineon IPB048N15N5 or the Vishay SiR800DP, provided they meet the specific electrical and thermal requirements of your application. Always verify the specifications to ensure compatibility.
Features
The NVMFS6H852NLT1G is a power MOSFET with the following key features:
1. Technology: Utilizes ON Semiconductor’s advanced PowerTrench® technology, which provides lower on-resistance and optimal switching performance.
2. Voltage and Current Ratings: Supports a drain-source voltage (V_DS) of 60V and a continuous drain current (I_D) up to 100A, making it suitable for high-power applications.
3. R_DS(on): Offers a low on-resistance (R_DS(on)) to minimize power loss and enhance efficiency, especially useful in power management and conversion applications.
4. Packaging: Comes in a compact and thermally efficient SO-8FL package, which helps in effective heat dissipation and space-saving on PCBs.
5. Applications: Ideal for synchronous rectification in DC-DC converters, motor drives, and other applications requiring efficient power switching.
6. Thermal Performance: The package design supports excellent thermal performance for high-current applications.
These features make the NVMFS6H852NLT1G a preferred choice in demanding environments where efficiency and reliability are paramount.
1. Technology: Utilizes ON Semiconductor’s advanced PowerTrench® technology, which provides lower on-resistance and optimal switching performance.
2. Voltage and Current Ratings: Supports a drain-source voltage (V_DS) of 60V and a continuous drain current (I_D) up to 100A, making it suitable for high-power applications.
3. R_DS(on): Offers a low on-resistance (R_DS(on)) to minimize power loss and enhance efficiency, especially useful in power management and conversion applications.
4. Packaging: Comes in a compact and thermally efficient SO-8FL package, which helps in effective heat dissipation and space-saving on PCBs.
5. Applications: Ideal for synchronous rectification in DC-DC converters, motor drives, and other applications requiring efficient power switching.
6. Thermal Performance: The package design supports excellent thermal performance for high-current applications.
These features make the NVMFS6H852NLT1G a preferred choice in demanding environments where efficiency and reliability are paramount.
Pinout
The NVMFS6H852NLT1G is a power MOSFET manufactured by ON Semiconductor. It features a 5-pin configuration in a Small Outline Integrated Circuit (SOIC) package. The primary function of this device is to serve as a switch or amplifier in various electronic systems, primarily for power management applications. It is designed to handle high-current and high-voltage conditions efficiently, making it suitable for use in automotive, industrial, and consumer electronics. This MOSFET provides low on-resistance and robust performance, enhancing the overall efficiency of power conversion systems.
Manufacturer
The NVMFS6H852NLT1G is manufactured by ON Semiconductor, which is now known as onsemi. onsemi is a leading semiconductor company that designs and manufactures a wide range of semiconductor components, including power and signal management, logic, discrete, and custom devices. The company serves diverse markets, such as automotive, industrial, communications, computing, and consumer electronics. onsemi is well-regarded for its focus on energy-efficient solutions and plays a significant role in advancing technologies related to power management and intelligent sensing.
Application
The NVMFS6H852NLT1G is a power MOSFET designed for applications requiring efficient power management and high-speed switching. Its typical application areas include:
1. Power Supplies: Used in DC-DC converters and voltage regulation modules for improved efficiency.
2. Motor Drives: Suitable for motor control in automotive and industrial applications.
3. Battery Management: Employed in battery protection circuits and charging systems.
4. Telecommunications: Utilized in power management for communication equipment.
5. Consumer Electronics: Integrated into devices for efficient power distribution and management.
Its low on-resistance and high current handling capabilities make it ideal for these applications.
1. Power Supplies: Used in DC-DC converters and voltage regulation modules for improved efficiency.
2. Motor Drives: Suitable for motor control in automotive and industrial applications.
3. Battery Management: Employed in battery protection circuits and charging systems.
4. Telecommunications: Utilized in power management for communication equipment.
5. Consumer Electronics: Integrated into devices for efficient power distribution and management.
Its low on-resistance and high current handling capabilities make it ideal for these applications.
Package
The NVMFS6H852NLT1G is a MOSFET device, and its package type is a flat lead package, specifically a PowerPAK SO-8. This type of package is commonly used for surface-mount applications, offering efficient heat dissipation and smaller footprint on printed circuit boards.
