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NVMJST1D6N04CTXG
+StücklisteTRENCH 6 40V LFPAK 5X7
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HerstellerOnsemi
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Herstellerteil #NVMJST1D6N04CTXG
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Datenblatt NVMJST1D6N04CTXG DataSheet
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Spezifikationen
| Attribut | Wert |
| PartStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 40 V |
| Current-ContinuousDrain(Id)@25°C | 314A (Tc) |
| DriveVoltage(MaxRdsOn,MinRdsOn) | 10V |
| RdsOn(Max)@Id,Vgs | 1.65mOhm @ 50A, 10V |
| Vgs(th)(Max)@Id | 3.5V @ 130µA |
| GateCharge(Qg)(Max)@Vgs | 47 nC @ 10 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 3300 pF @ 25 V |
| PowerDissipation(Max) | 300W (Tc) |
| OperatingTemperature | -55°C ~ 175°C (TJ) |
| Grade | Automotive |
| Qualification | AEC-Q101 |
| MountingType | Surface Mount |
| SupplierDevicePackage | 10-TCPAK |
| Package/Case | 10-PowerLSOP (0.209", 5.30mm Width) |
| BaseProductNumber | NVMJST1D |
Übersicht
Description
To obtain detailed information about NVMJST1D6N04CTXG, it is best to consult the manufacturer's datasheet or product documentation. This documentation would provide specifications like storage capacity, read/write speeds, power consumption, physical dimensions, and intended applications. Such components are integral in various electronic devices, from computers and smartphones to industrial equipment.
For precise understanding or procurement, contacting the manufacturer or authorized distributors is recommended to gain insights into its availability, compatibility, and technical support.
Equivalent
1. IRF540N by Infineon Technologies
2. FDMS86101 by ON Semiconductor (similar internal specifications)
3. STP55NF06 by STMicroelectronics
Always consult the datasheets to ensure compatibility with your specific application.
Features
1. N-Channel MOSFET: This device is an N-channel MOSFET, which means it allows current to flow when a positive voltage is applied to the gate.
2. Voltage and Current Ratings: It typically operates at a maximum drain-source voltage (V_DS) of around 40V and can handle continuous drain current (I_D) up to a certain limit, often around tens of amperes.
3. Low On-Resistance: The MOSFET features low on-resistance (R_DS(on)), enhancing efficiency by minimizing power loss during operation.
4. High-Speed Switching: It offers fast switching speeds, making it suitable for high-frequency applications.
5. Thermal Performance: Designed with good thermal characteristics to manage heat dissipation effectively during operation.
6. Package Type: It's available in various package types which provide flexibility for PCB layout and thermal management.
These features make it suitable for a wide range of applications, including power management, automotive, and industrial systems.
Pinout
The primary function of the NVMJST1D6N04CTXG is to serve as a switch or amplifier in electronic circuits. It is used to control power flow and manage signal amplification in various applications, such as motor drives, power supplies, and other electronic devices requiring efficient power management and switching.
For precise pin count and configuration, it is best to consult the datasheet specific to the NVMJST1D6N04CTXG from ON Semiconductor, as it will provide detailed information on the pin layout and package type used for this component.
Manufacturer
Application
1. Power Management: Used in DC-DC converters and voltage regulation modules to manage and convert power efficiently.
2. Switching Applications: Ideal for load switching due to its fast switching speeds and low on-resistance.
3. Motor Control: Applied in motor drive circuits for controlling and driving motors in industrial and consumer applications.
4. Automotive Systems: Utilized in automotive electronic systems for power distribution and control.
5. Battery Management: Used in battery protection and charging circuits to enhance energy efficiency and safety.
These applications leverage the MOSFET's efficiency, thermal performance, and reliability.