Abbildungen dienen nur als Referenz
PIM F1 SIC HALFBRIDGE 1200V 10MO
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HerstellerOnsemi
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Herstellerteil #NXH010P120MNF1PG
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Datenblatt NXH010P120MNF1PG DataSheet
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Paket Module
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Auf Lager8481
365 Tage Qualitätsgarantie
7*24 Stunden-Servicegarantie
90-Tage Kundendienstgarantie
Originalproduktgarantie
Spezifikationen
| Attribut | Wert |
| Supplier | onsemi |
| Package / Case | Tray |
| Part Status | Active |
| FET Type | 2 N-Channel (Dual) Common Source |
| FET Feature | Silicon Carbide (SiC) |
| Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
| Current - Continuous Drain(Id) @ 25°C | 114A (Tc) |
| Rds On(Max) @ Id Vgs | 14mOhm @ 100A, 20V |
| Vgs(th)(Max) @ Id | 4.3V @ 40mA |
| Gate Charge(Qg)(Max) @ Vgs | 454nC @ 20V |
| Input Capacitance(Ciss)(Max) @ Vds | 4707pF @ 800V |
| Power - Max | 250W (Tj) |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Mounting Type | Chassis Mount |
