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P3M06300K3
+StücklisteSICFET N-CH 650V 9A TO-247-3
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HerstellerPN Junction Halbleiter
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Herstellerteil #P3M06300K3
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Datenblatt P3M06300K3 DataSheet
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Spezifikationen
| Attribut | Wert |
| Supplier | PN Junction Semiconductor |
| Package | Tube |
| Series | P3M |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | SiCFET (Silicon Carbide) |
| DraintoSourceVoltage(Vdss) | 650 V |
| Current-ContinuousDrain(Id)@25°C | 9A |
| DriveVoltage(MaxRdsOnMinRdsOn) | 15V |
| RdsOn(Max)@IdVgs | 500mOhm @ 4.5A, 15V |
| Vgs(th)(Max)@Id | 2.2V @ 5mA (Typ) |
| GateCharge(Qg)(Max)@Vgs | 904 nC @ 15 V |
| Vgs(Max) | +20V, -8V |
| InputCapacitance(Ciss)(Max)@Vds | 338 pF @ 400 V |
| PowerDissipation(Max) | 38W |
| OperatingTemperature | -55°C ~ 175°C (TJ) |
| MountingType | Through Hole |
| SupplierDevicePackage | TO-247-3L |
