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PHN203,518
+StücklisteMOSFET 2N-CH 30V 6.3A SOT96-1
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HerstellerNexperia USA Inc.
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Herstellerteil #PHN203,518
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Datenblatt PHN203,518 DataSheet
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Paket SOIC-8
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Auf Lager9214
365 Tage Qualitätsgarantie
7*24 Stunden-Servicegarantie
90-Tage Kundendienstgarantie
Originalproduktgarantie
Spezifikationen
| Attribut | Wert |
| Supplier | Nexperia USA Inc.,Rochester Electronics, LLC |
| Package / Case | Tape & Reel (TR),Bulk |
| Series | TrenchMOS™ |
| Part Status | Obsolete |
| FET Type | 2 N-Channel (Dual) |
| FET Feature | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain(Id) @ 25°C | 6.3A |
| Rds On(Max) @ Id Vgs | 30mOhm @ 7A, 10V |
| Vgs(th)(Max) @ Id | 2V @ 1mA |
| Gate Charge(Qg)(Max) @ Vgs | 14.6nC @ 10V |
| Input Capacitance(Ciss)(Max) @ Vds | 560pF @ 20V |
| Power - Max | 2W |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
