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PMDPB56XN,115
+StücklisteMOSFET 2N-CH 30V 3.1A HUSON6
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HerstellerNXP USA Inc.
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Herstellerteil #PMDPB56XN,115
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Datenblatt PMDPB56XN,115 DataSheet
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Paket 6-UDFN Exposed Pad
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Auf Lager6194
365 Tage Qualitätsgarantie
7*24 Stunden-Servicegarantie
90-Tage Kundendienstgarantie
Originalproduktgarantie
Spezifikationen
| Attribut | Wert |
| Supplier | NXP USA Inc.,Rochester Electronics, LLC |
| Package | Tape & Reel (TR),Cut Tape (CT),Bulk |
| ProductStatus | Obsolete |
| FETType | 2 N-Channel (Dual) |
| FETFeature | Logic Level Gate |
| DraintoSourceVoltage(Vdss) | 30V |
| Current-ContinuousDrain(Id)@25°C | 3.1A |
| RdsOn(Max)@IdVgs | 73mOhm @ 3.1A, 4.5V |
| Vgs(th)(Max)@Id | 1.5V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 2.9nC @ 4.5V |
| InputCapacitance(Ciss)(Max)@Vds | 170pF @ 15V |
| Power-Max | 510mW |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| Package/Case | 6-UDFN Exposed Pad |
