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PMDPB65UP,115
+StücklisteMOSFET 2P-CH 20V 3.5A SOT1118
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HerstellerNXP USA Inc.
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Herstellerteil #PMDPB65UP,115
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Datenblatt PMDPB65UP,115 DataSheet
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Paket UDFN-6
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Auf Lager7588
365 Tage Qualitätsgarantie
7*24 Stunden-Servicegarantie
90-Tage Kundendienstgarantie
Originalproduktgarantie
Spezifikationen
| Attribut | Wert |
| Supplier | NXP USA Inc.,Rochester Electronics, LLC |
| Package / Case | Tape & Reel (TR),Cut Tape (CT),Bulk |
| Part Status | Obsolete |
| FET Type | 2 P-Channel (Dual) |
| FET Feature | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain(Id) @ 25°C | 3.5A |
| Rds On(Max) @ Id Vgs | 70mOhm @ 1A, 4.5V |
| Vgs(th)(Max) @ Id | 1V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 6nC @ 4.5V |
| Input Capacitance(Ciss)(Max) @ Vds | 380pF @ 10V |
| Power - Max | 520mW |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Surface Mount |
