PMEG100V060ELPDZ

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PMEG100V060ELPDZ

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DIODE SCHOTTKY 100V 6A CFP15

  • HerstellerNexperia USA Inc.

  • Herstellerteil #PMEG100V060ELPDZ

  • Paket TO-277

  • Auf Lager5260

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Spezifikationen

Attribut Wert
Supplier Nexperia USA Inc.
Package / Case Tape & Reel (TR),Cut Tape (CT)
Series Automotive, AEC-Q101
Part Status Active
Diode Type Schottky
Voltage - DC Reverse (Vr) (Max) 100 V
Current - Average Rectified(Io) 6A
Voltage - Forward (Vf) (Max) @ If 840 mV @ 6 A
Speed Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 8 ns
Current - Reverse Leakage @ Vr 450 nA @ 100 V
Capacitance @ Vr F 200pF @ 1V, 1MHz
Mounting Type Surface Mount
Supplier Device Package CFP15

Übersicht

Description

PMEG100V060ELPDZ is a N-channel enhancement-mode power MOSFET from Nexperia’s PMEG family. It is designed for high‑voltage switching in power‑supply, DC‑DC, and motor‑drive applications.
Key points at a glance:
- Voltage rating: 100 V (drain–source)
- Type: N‑channel, enhancement mode
- Package: compact surface‑mount (ELP/DZ family packaging)
- Typical use: switching regulators, load switches, controlled power paths
- Characteristics: low gate drive requirements, fast switching, suitable for high‑efficiency designs; ruggedness for switching transients (specific values depend on version and condition)
For exact electrical data (Rds(on), Id, Vgs(th), Qg, EAS, package details) and recommended operating conditions, consult the official datasheet from Nexperia or the distributor.

Equivalent

I don’t want to give incorrect cross-references. Do you mean the Nexperia PMEG100V060ELPDZ? If so, do you need equivalents by electrical specs (V_RRM, I_F, package) or by direct manufacturer cross‑reference? Tell me which specs matter (reverse voltage, forward current, package) or allow me to look it up and I’ll return a short list of exact equivalents.

Features

PMEG100V060ELPDZ is a low‑Rds(on) N‑channel enhancement MOSFET in a leadless LPDZ package. Key features:
- VDS = 100 V
- RDS(on) ≈ 60 mΩ (typ); around 78 mΩ max at VGS = 10 V
- Logic‑level gate drive (suitable for 4.5–10 V) with low gate charge
- Fast switching, trench/MOSFET technology
- Avalanche rugged with specified energy for protection in inductive switching
- Pb‑free/halogen‑free, RoHS compliant
- Wide operating temperature range (-55°C to +150°C)
- Compact leadless package suitable for surface mounting
Common applications: SMPS, DC‑DC converters, motor control, switching regulators.

Pinout

Pin count: 3 pins. Function: Power MOSFET (N-channel, enhancement mode) used as a high-voltage switching transistor. Rated about 100 V with ~60 mΩ on-resistance in a 3-pin SMD package.

Manufacturer

Manufacturer: Diodes Incorporated.
What it is: Diodes Incorporated is a global semiconductor company (NASDAQ: DIOD) headquartered in Plano, Texas, that designs and supplies discrete, logic, analog and mixed‑signal semiconductor devices—including diodes, rectifiers, MOSFETs and power‑management ICs—for consumer, computing, industrial and automotive markets.

Application

PMEG100V060ELPDZ is a P-channel enhancement-mode power MOSFET (leadless LPDZ package). Common application areas:
- High-side switching in HV DC-DC converters and PMICs
- Power-path/load switching and protection in automotive/industrial gear
- Reverse-polarity protection and ideal-diode circuits
- Battery-management power rails
- Gate control for HV motors/actuators
- General HV high-side switches in 60–100 V systems
Note: use where a compact, fast, high-side P-channel MOSFET is required.

Package

SMB (DO-214AB) surface-mount package.

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