PMEG6030EP-QX

Abbildungen dienen nur als Referenz

PMEG6030EP-QX

+Stückliste

DIODE SCHOTTKY 60V 3A SOD128

  • HerstellerNexperia USA Inc.

  • Herstellerteil #PMEG6030EP-QX

  • Paket SOD-128

  • Auf Lager5325

365 Tage Qualitätsgarantie

7*24 Stunden-Servicegarantie

90-Tage Kundendienstgarantie

Originalproduktgarantie

Spezifikationen

Attribut Wert
Supplier Nexperia USA Inc.
Package / Case Tape & Reel (TR)
Series Automotive, AEC-Q101
Part Status Active
Diode Type Schottky
Voltage - DC Reverse (Vr) (Max) 60 V
Current - Average Rectified(Io) 3A
Voltage - Forward (Vf) (Max) @ If 530 mV @ 3 A
Speed Fast Recovery =< 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr 200 µA @ 60 V
Capacitance @ Vr F 360pF @ 1V, 1MHz
Mounting Type Surface Mount
Supplier Device Package SOD-128/CFP5

Übersicht

Description

PMEG6030EP-QX is a single N‑channel enhancement‑mode power MOSFET from the PMEG6030EP family. It’s designed for compact, efficient switching in power‑management circuits. Key points (see the datasheet for exact figures): VDS around 60 V; low RDS(on); logic‑level gate typically usable from 3.3–5 V; small gate charge and fast switching; available in a surface‑mount package with -QX indicating the specific package/tape option. Typical applications include DC‑DC converters, high-/low-side switches, load switches, and motor‑driver stages. Packaging and electricals vary by vendor, so always verify VDS, ID, RDS(on) at your operating temperature, Qgs, and package type in the datasheet. If you share the vendor (e.g., ST/Nexperia/Vishay), I can pull the exact specifications and a quick design checklist.

Equivalent

I don’t have a definitive cross for PMEG6030EP‑QX without its key specs. Please provide or confirm: diode type (Schottky/TVS/Zener), reverse voltage, continuous forward current, package, and critical electrical limits (VF, leakage). With that I can list direct equivalents from Nexperia, ON Semiconductor, Diodes Inc., Vishay, etc., or examine a datasheet and recommend drop‑in replacements.

Features

PMEG6030EP-QX features (summary):
- Type: Schottky barrier diode
- Reverse voltage: 60 V
- Average forward current: 3 A
- Low forward voltage drop (typical ~0.5–0.7 V at 3 A)
- Very fast switching with no reverse-recovery
- RoHS-compliant, Pb-free
- Package: QX/SMD, suitable for surface-mount assembly
- Wide operating temperature: typically -55 °C to +150 °C
- Applications: DC-DC converters, freewheeling/rectification, polarity protection

Manufacturer

Manufacturer: Nexperia.
What kind of company: Nexperia is a global semiconductor manufacturer (spun out of NXP’s Standard Products) that designs and produces discrete components, power semiconductors (diodes, MOSFETs), and logic ICs for automotive, industrial, and consumer electronics applications.

Application

PMEG6030EP-QX is a P-channel MOSFET used for high-side power switching. Typical application areas include:
- High-side load switching in DC-DC converters and PMICs
- Power-path management and supply OR-ing for redundant rails
- Reverse-polarity/short‑circuit protection in battery-powered devices
- PWM control and LED-driver circuits
- Hot-swap protection and power-management in consumer and industrial electronics
These uses benefit from simple gate drive, fast switching, and compact packaging.

Package

I don’t have a verified package type for PMEG6030EP-QX without the manufacturer or datasheet. Please provide the manufacturer name or a datasheet link and I’ll give the exact package type.

Produkte, die mit PMEG6030EP-QX zusammenhängen