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MOSFET 2N-CH 30V 0.9A 6TSSOP
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HerstellerNXP USA Inc.
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Herstellerteil #PMGD175XN,115
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Datenblatt PMGD175XN,115 DataSheet
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Paket SC-88
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Auf Lager6380
365 Tage Qualitätsgarantie
7*24 Stunden-Servicegarantie
90-Tage Kundendienstgarantie
Originalproduktgarantie
Spezifikationen
| Attribut | Wert |
| Supplier | NXP USA Inc.,Rochester Electronics, LLC |
| Package / Case | Tape & Reel (TR),Cut Tape (CT),Bulk |
| Part Status | Obsolete |
| FET Type | 2 N-Channel (Dual) |
| FET Feature | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain(Id) @ 25°C | 900mA |
| Rds On(Max) @ Id Vgs | 225mOhm @ 1A, 4.5V |
| Vgs(th)(Max) @ Id | 1.5V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 1.1nC @ 4.5V |
| Input Capacitance(Ciss)(Max) @ Vds | 75pF @ 15V |
| Power - Max | 390mW |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
