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NEXPERIA PSMN2R0-60PS - 120A, 60
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HerstellerNXP Halbleiter
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Herstellerteil #PSMN2R0-60PS,127
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Datenblatt PSMN2R0-60PS,127 DataSheet
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Auf Lager4030
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Originalproduktgarantie
Spezifikationen
| Attribut | Wert |
| Supplier | Rochester Electronics, LLC |
| Package / Case | Bulk |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60 V |
| Current - Continuous Drain(Id) @ 25°C | 120A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 10V |
| Rds On(Max) @ Id Vgs | 2.2mOhm @ 25A, 10V |
| Vgs(th)(Max) @ Id | 4V @ 1mA |
| Gate Charge(Qg)(Max) @ Vgs | 137 nC @ 10 V |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 9997 pF @ 30 V |
| Power Dissipation (Max) | 338W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220AB |
