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POWER FIELD-EFFECT TRANSISTOR
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HerstellerNexperia USA Inc.
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Herstellerteil #PSMN6R4-30MLD,115
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Datenblatt PSMN6R4-30MLD,115 DataSheet
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Auf Lager3098
365 Tage Qualitätsgarantie
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Originalproduktgarantie
Spezifikationen
| Attribut | Wert |
| Package / Case | Bulk |
| Part Status | Active |
Übersicht
Description
Key specifications often include a voltage rating of around 30 volts and a continuous current rating of several amperes, though exact figures can vary. The "115" in the part number may refer to specific packaging or version details provided by the manufacturer.
This MOSFET is commonly used in applications like DC-DC converters, motor drives, and other circuits requiring efficient power handling. It provides benefits such as reduced power loss, compact size, and high thermal performance. Always refer to the manufacturer's datasheet for precise electrical characteristics and thermal management guidelines to ensure optimal usage.
Equivalent
1. Infineon BSC123N08NS5: Similar Rds(on) and voltage rating.
2. Vishay SiRA80DP: Comparable specifications.
3. ON Semiconductor NTMFS5C604NL: Matches in terms of voltage and Rds(on).
Always verify the full datasheet to ensure all parameters meet your application's requirements.
Features
1. Voltage Rating: It typically has a drain-source voltage (V_DS) rating suitable for handling high-power applications.
2. Current Capacity: Capable of handling significant current levels, making it suitable for power switching applications.
3. R_DS(on): Low on-state resistance, which minimizes power loss and improves efficiency.
4. Package Type: Often comes in a surface-mount package for easy integration into PCBs.
5. Thermal Performance: Designed for efficient thermal management, ensuring stability and reliability under load.
6. Fast Switching: Offers fast switching speeds, beneficial for high-frequency applications.
7. Robust Construction: Built to withstand harsh conditions, providing durability and longevity.
These features make it suitable for applications such as power management, automotive systems, and industrial electronics. Always refer to the manufacturer's datasheet for specific details and parameters.
Pinout
1. Gate (G): This pin is used to control the on/off state of the MOSFET.
2. Drain (D): This pin is the terminal through which the main current flows from drain to source when the MOSFET is in the 'on' state.
3. Source (S): This pin is the terminal through which the main current exits the MOSFET.
4. Tab: The tab is usually connected internally to the drain and is used for heat dissipation; it can also be electrically connected in some applications.
This MOSFET is designed for use in high-performance, low-voltage switching applications, providing efficient control and fast switching times.