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R5009ANX
+StücklisteMOSFET N-CH 500V 9A TO220
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HerstellerRohm Halbleiter
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Herstellerteil #R5009ANX
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Auf Lager485
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Spezifikationen
| Attribut | Wert |
| Supplier | Rohm Semiconductor |
| Package / Case | Bulk,Bulk |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 500 V |
| Current - Continuous Drain(Id) @ 25°C | 9A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 10V |
| Rds On(Max) @ Id Vgs | 720mOhm @ 4.5A, 10V |
| Vgs(th)(Max) @ Id | 4.5V @ 1mA |
| Gate Charge(Qg)(Max) @ Vgs | 21 nC @ 10 V |
| Vgs(Max) | ±30V |
| Input Capacitance(Ciss)(Max) @ Vds | 650 pF @ 25 V |
| Power Dissipation (Max) | 50W (Tc) |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220FM |
