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R6009JND3TL1
+StücklisteMOSFET N-CH 600V 9A TO252
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HerstellerRohm Halbleiter
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Herstellerteil #R6009JND3TL1
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Auf Lager8733
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Spezifikationen
| Attribut | Wert |
| Supplier | Rohm Semiconductor |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 600 V |
| Current - Continuous Drain(Id) @ 25°C | 9A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 15V |
| Rds On(Max) @ Id Vgs | 585mOhm @ 4.5A, 15V |
| Vgs(th)(Max) @ Id | 7V @ 1.38mA |
| Gate Charge(Qg)(Max) @ Vgs | 22 nC @ 15 V |
| Vgs(Max) | ±30V |
| Input Capacitance(Ciss)(Max) @ Vds | 645 pF @ 100 V |
| Power Dissipation (Max) | 125W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | TO-252 |
