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RDN100N20FU6
+StücklisteMOSFET N-CH 200V 10A TO220FN
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HerstellerRohm Halbleiter
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Herstellerteil #RDN100N20FU6
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Auf Lager7805
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Spezifikationen
| Attribut | Wert |
| Supplier | Rohm Semiconductor |
| Package / Case | Bulk |
| Part Status | Obsolete |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 200 V |
| Current - Continuous Drain(Id) @ 25°C | 10A (Ta) |
| Drive Voltage(Max Rds On Min Rds On) | 10V |
| Rds On(Max) @ Id Vgs | 360mOhm @ 5A, 10V |
| Vgs(th)(Max) @ Id | 4V @ 1mA |
| Gate Charge(Qg)(Max) @ Vgs | 30 nC @ 10 V |
| Vgs(Max) | ±30V |
| Input Capacitance(Ciss)(Max) @ Vds | 543 pF @ 10 V |
| Power Dissipation (Max) | 35W (Tc) |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220FN |
