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RFD16N05LSM9A
+StücklisteMOSFET N-CH 50V 16A TO252AA
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HerstellerOnsemi
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Herstellerteil #RFD16N05LSM9A
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Spezifikationen
| Attribut | Wert |
| Supplier | onsemi |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 50 V |
| Current - Continuous Drain(Id) @ 25°C | 16A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 4V, 5V |
| Rds On(Max) @ Id Vgs | 47mOhm @ 16A, 5V |
| Vgs(th)(Max) @ Id | 2V @ 250mA |
| Gate Charge(Qg)(Max) @ Vgs | 80 nC @ 10 V |
| Vgs(Max) | ±10V |
| Power Dissipation (Max) | 60W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | TO-252AA |
Übersicht
Description
RFD16N05LSM9A is a power N-channel MOSFET (enhancement mode) from the RFD series used for high‑current switching in low‑voltage power electronics. It’s intended for applications like buck/boost DC‑DC converters, motor drivers, and load switches on 12–60 V rails.
Key points:
- Voltage/current: designed for around 50 V drain–source rating with tens of amps of continuous current (exact values depend on package and cooling).
- Conductance: low RDS(on) to minimize conduction losses; gate drive is compatible with logic-level signals for easier control.
- Switching performance: fast switching, suitable for high-frequency power electronics; avalanche ruggedness for inductive loads.
- Package: supplied in a compact surface‑mount package with a thermal path (package type varies; check the datasheet for pinout and mounting recommendations).
- Protections: typical MOSFET protections (overcurrent/overtemperature) and safe operating area characteristics.
Note: exact numbers (RDS(on), ID, VDS, pinout) vary by package; consult the latest datasheet for precise specs and layout guidelines.
Key points:
- Voltage/current: designed for around 50 V drain–source rating with tens of amps of continuous current (exact values depend on package and cooling).
- Conductance: low RDS(on) to minimize conduction losses; gate drive is compatible with logic-level signals for easier control.
- Switching performance: fast switching, suitable for high-frequency power electronics; avalanche ruggedness for inductive loads.
- Package: supplied in a compact surface‑mount package with a thermal path (package type varies; check the datasheet for pinout and mounting recommendations).
- Protections: typical MOSFET protections (overcurrent/overtemperature) and safe operating area characteristics.
Note: exact numbers (RDS(on), ID, VDS, pinout) vary by package; consult the latest datasheet for precise specs and layout guidelines.
Features
RFD16N05LSM9A is a logic‑level N‑channel MOSFET. Key features:
- VDS: 50 V; ID: 16 A (continuous)
- RDS(on): low, ~0.05–0.08 Ω typical at VGS ≈ 4.5 V (lower with higher VGS)
- Logic‑level gate drive: VGS(th) ~1.0–2.5 V
- Fast switching with low gate charge
- Built‑in body diode; rugged avalanche energy handling
- Surface‑mount/SMD package; RoHS compliant (variant packaging options)
- VDS: 50 V; ID: 16 A (continuous)
- RDS(on): low, ~0.05–0.08 Ω typical at VGS ≈ 4.5 V (lower with higher VGS)
- Logic‑level gate drive: VGS(th) ~1.0–2.5 V
- Fast switching with low gate charge
- Built‑in body diode; rugged avalanche energy handling
- Surface‑mount/SMD package; RoHS compliant (variant packaging options)
Pinout
Pin count: 3 pins (Gate, Drain, Source) with the drain also tied to the package tab.
Function: N-channel enhancement-mode power MOSFET used as a switching transistor in power circuitry (low-side or high-side switching depending on the circuit).
Function: N-channel enhancement-mode power MOSFET used as a switching transistor in power circuitry (low-side or high-side switching depending on the circuit).
Manufacturer
Manufacturer: STMicroelectronics.
What kind of company: STMicroelectronics is a Franco‑Italian multinational semiconductor company that designs, manufactures and sells a broad range of semiconductor products—including power MOSFETs, analog and mixed‑signal ICs, microcontrollers, sensors and power management devices—for industrial, automotive, consumer and communications markets.
What kind of company: STMicroelectronics is a Franco‑Italian multinational semiconductor company that designs, manufactures and sells a broad range of semiconductor products—including power MOSFETs, analog and mixed‑signal ICs, microcontrollers, sensors and power management devices—for industrial, automotive, consumer and communications markets.
Application
RFD16N05LSM9A is a high‑current N-channel MOSFET. Common application areas include:
- DC-DC converters and point‑of‑load regulators (buck/boost)
- Motor control (BLDC, DC motors, stepper) with appropriate gate drive
- Automotive power electronics and load switching in 12–24 V systems
- Power supplies, inverters, UPS, and solar/energy-storage electronics
- General high‑current switching and synchronous rectification in switching regulators
Note: gate drive requirements and drain-source voltage ratings should match the specific design.
- DC-DC converters and point‑of‑load regulators (buck/boost)
- Motor control (BLDC, DC motors, stepper) with appropriate gate drive
- Automotive power electronics and load switching in 12–24 V systems
- Power supplies, inverters, UPS, and solar/energy-storage electronics
- General high‑current switching and synchronous rectification in switching regulators
Note: gate drive requirements and drain-source voltage ratings should match the specific design.
Package
I don’t have real-time web access to verify that part number. Please provide the RFD16N05LSM9A datasheet or allow me to look it up, and I’ll tell you the exact package type.
