Abbildungen dienen nur als Referenz
TRANS 2NPN PREBIAS 0.3W SMV
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HerstellerToshiba Halbleiter und Speicher
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Herstellerteil #RN1503(TE85L,F)
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Datenblatt RN1503(TE85L,F) DataSheet
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Paket SOT-753
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Auf Lager6
365 Tage Qualitätsgarantie
7*24 Stunden-Servicegarantie
90-Tage Kundendienstgarantie
Originalproduktgarantie
Spezifikationen
| Attribut | Wert |
| Supplier | Toshiba Semiconductor and Storage |
| Package / Case | Cut Tape (CT) |
| Part Status | Active |
| Transistor Type | 2 NPN - Pre-Biased (Dual) (Emitter Coupled) |
| Current - Collector(Ic)(Max) | 100mA |
| Voltage - Collector Emitter Breakdown(Max) | 50V |
| Resistor - Base(R1) | 22kOhms |
| Resistor - Emitter Base(R2) | 22kOhms |
| DC Current Gain(h FE)(Min) @ Ic Vce | 70 @ 10mA, 5V |
| Vce Saturation(Max) @ Ib Ic | 300mV @ 250µA, 5mA |
| Current - Collector Cutoff(Max) | 100nA (ICBO) |
| Frequency - Transition | 250MHz |
| Power - Max | 300mW |
| Mounting Type | Surface Mount |
