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RP1A090ZPTR
+StücklisteMOSFET P-CH 12V 9A MPT6
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HerstellerRohm Halbleiter
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Herstellerteil #RP1A090ZPTR
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Datenblatt RP1A090ZPTR DataSheet
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Auf Lager5575
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Spezifikationen
| Attribut | Wert |
| Supplier | Rohm Semiconductor |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Part Status | Obsolete |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 12 V |
| Current - Continuous Drain(Id) @ 25°C | 9A (Ta) |
| Drive Voltage(Max Rds On Min Rds On) | 1.5V, 4.5V |
| Rds On(Max) @ Id Vgs | 12mOhm @ 9A, 4.5V |
| Vgs(th)(Max) @ Id | 1V @ 1mA |
| Gate Charge(Qg)(Max) @ Vgs | 59 nC @ 4.5 V |
| Vgs(Max) | ±10V |
| Input Capacitance(Ciss)(Max) @ Vds | 7400 pF @ 6 V |
| Power Dissipation (Max) | 2W (Ta) |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | MPT6 |
