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RS1DLHMQG
+StücklisteDIODE GEN PURP 200V 800MA SUBSMA
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HerstellerTaiwan Semiconductor Corporation
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Herstellerteil #RS1DLHMQG
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Datenblatt RS1DLHMQG DataSheet
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Paket DO-219AB
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Auf Lager7146
365 Tage Qualitätsgarantie
7*24 Stunden-Servicegarantie
90-Tage Kundendienstgarantie
Originalproduktgarantie
Spezifikationen
| Attribut | Wert |
| Supplier | Taiwan Semiconductor Corporation |
| Package | Tape & Reel (TR) |
| Series | Automotive, AEC-Q101 |
| ProductStatus | Active |
| DiodeType | Standard |
| Voltage-DCReverse(Vr)(Max) | 200 V |
| Current-AverageRectified(Io) | 800mA |
| Voltage-Forward(Vf)(Max)@If | 1.3 V @ 800 mA |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| ReverseRecoveryTime(trr) | 150 ns |
| Current-ReverseLeakage@Vr | 5 µA @ 200 V |
| Capacitance@VrF | 10pF @ 4V, 1MHz |
| MountingType | Surface Mount |
| Package/Case | DO-219AB |
| SupplierDevicePackage | Sub SMA |
