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RSJ10HN06TL
+StücklisteMOSFET N-CH 60V 100A LPTS
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HerstellerRohm Halbleiter
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Herstellerteil #RSJ10HN06TL
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Datenblatt RSJ10HN06TL DataSheet
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Auf Lager8407
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Spezifikationen
| Attribut | Wert |
| Supplier | Rohm Semiconductor |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Part Status | Obsolete |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60 V |
| Current - Continuous Drain(Id) @ 25°C | 100A (Ta) |
| Drive Voltage(Max Rds On Min Rds On) | 4V, 10V |
| Rds On(Max) @ Id Vgs | 4.2mOhm @ 50A, 10V |
| Vgs(th)(Max) @ Id | 2.5V @ 1mA |
| Gate Charge(Qg)(Max) @ Vgs | 202 nC @ 10 V |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 11000 pF @ 10 V |
| Power Dissipation (Max) | 100W (Tc) |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | LPTS |
