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RV4E031RPTCR1
+StücklisteMOSFET P-CH 30V 3.1A DFN1616-6
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HerstellerRohm Halbleiter
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Herstellerteil #RV4E031RPTCR1
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Auf Lager9198
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Spezifikationen
| Attribut | Wert |
| Supplier | Rohm Semiconductor |
| Package / Case | Tape & Reel (TR) |
| Series | Automotive, AEC-Q101 |
| Part Status | Active |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30 V |
| Current - Continuous Drain(Id) @ 25°C | 3.1A (Ta) |
| Drive Voltage(Max Rds On Min Rds On) | 4.5V, 10V |
| Rds On(Max) @ Id Vgs | 105mOhm @ 3.1A, 10V |
| Vgs(th)(Max) @ Id | 2.5V @ 1mA |
| Gate Charge(Qg)(Max) @ Vgs | 4.8 nC @ 5 V |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 460 pF @ 10 V |
| Power Dissipation (Max) | 1.5W |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Surface Mount, Wettable Flank |
| Supplier Device Package | DFN1616-6W |
