RXH100N03TB1

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RXH100N03TB1

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4V DRIVE NCH MOSFET: MOSFETS ARE

  • HerstellerRohm Halbleiter

  • Herstellerteil #RXH100N03TB1

  • Auf Lager9612

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Spezifikationen

Attribut Wert
Supplier Rohm Semiconductor
Package / Case Tape & Reel (TR),Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain(Id) @ 25°C 10A (Ta)
Drive Voltage(Max Rds On Min Rds On) 4V, 10V
Rds On(Max) @ Id Vgs 13mOhm @ 10A, 10V
Vgs(th)(Max) @ Id 2.5V @ 1mA
Gate Charge(Qg)(Max) @ Vgs 11 nC @ 5 V
Vgs(Max) ±20V
Input Capacitance(Ciss)(Max) @ Vds 800 pF @ 10 V
Power Dissipation (Max) 2W (Ta)
Operating Temperature 150°C
Mounting Type Surface Mount
Supplier Device Package 8-SOP

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