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S29GL128S10TFI010
+StücklisteIC FLASH 128MBIT PARALLEL 56TSOP
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HerstellerCypress Semiconductor Corp.
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Herstellerteil #S29GL128S10TFI010
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Paket TSOP-56
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Auf Lager1806
365 Tage Qualitätsgarantie
7*24 Stunden-Servicegarantie
90-Tage Kundendienstgarantie
Originalproduktgarantie
Spezifikationen
| Attribut | Wert |
| Package / Case | Bulk,Tray |
| Series | GL-S |
| Part Status | Active |
| Memory Type | Non-Volatile |
| Memory Format | FLASH |
| Technology | FLASH - NOR |
| Memory Size | 128Mb (8M x 16) |
| Memory Interface | Parallel |
| Write Cycle Time - Word Page | 60ns |
| Access Time | 100 ns |
| Voltage - Supply | 2.7V ~ 3.6V |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Mounting Type | Surface Mount |
Übersicht
Description
Key features include a fast access time of 100 ns, making it suitable for high-speed applications. It supports single supply voltage operation, typically at 3.0V, with an operational range from 2.7V to 3.6V. The memory architecture is based on Cypress's MirrorBit technology, which enhances reliability and performance by storing two bits per cell.
The device supports typical flash memory operations, such as sector erase and byte programming, and is designed to operate over an industrial temperature range, making it suitable for various environmental conditions. Additionally, it includes advanced security features to protect data integrity and prevent unauthorized access.
Overall, the S29GL128S10TFI010 is suitable for applications in automotive, networking, telecommunications, and consumer electronics that demand reliable and fast non-volatile memory solutions.
Equivalent
1. Micron MT28EW128ABA - 128Mb NOR Flash
2. Winbond W29GL128S - 128Mb Parallel NOR Flash
3. Macronix MX29GL128EH - 128Mb Parallel NOR Flash
Ensure compatibility by checking the specific parameters like voltage, temperature range, and package type.
Features
1. Architecture: It uses a uniform 128 KB sector architecture, which simplifies code and data storage management.
2. Performance: The device operates with a read access time of 100 ns, providing fast read operations.
3. Versatility: It supports single supply voltage of 3.0 V for read, program, and erase operations, making it suitable for various embedded applications.
4. Security: Offers a Secure Silicon Sector to protect critical code and data.
5. Erase/Write Endurance: Supports a minimum of 100,000 program/erase cycles per sector and a data retention of 20 years, ensuring long-term reliability.
6. Interface: Compatible with common Flash interfaces, supporting both asynchronous and page mode read operations.
7. Temperature Range: The device can operate within the industrial temperature range of -40°C to +85°C.
These features make the S29GL128S10TFI010 suitable for use in automotive, industrial, and communication applications where reliable, high-speed, and flexible memory solutions are needed.
Pinout
The S29GL128S10TFI010 comes in a 56-pin TSOP (Thin Small Outline Package) or a 64-ball Fortified BGA (Ball Grid Array) package. The specific pin count and arrangement can vary depending on the package type:
1. 56-pin TSOP:
- Pin count: 56 pins.
- Key functions: Data I/O, address lines, control signals (such as Chip Enable, Output Enable, Write Enable), power supply, and ground.
2. 64-ball Fortified BGA:
- Pin count: 64 balls.
- Key functions: Similar to the TSOP package, including Data I/O, address lines, control signals, power supply, and ground.
The device supports a standard asynchronous read interface, provides an extended temperature range, and is known for high performance in reading and writing operations, making it suitable for various applications including automotive, industrial, and telecommunications.