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S29GL256P10TFI020
+StücklisteIC FLASH 256MBIT PARALLEL 56TSOP
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HerstellerCypress Semiconductor Corp.
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Herstellerteil #S29GL256P10TFI020
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Datenblatt S29GL256P10TFI020 DataSheet
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Paket TSOP-56
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Auf Lager2792
365 Tage Qualitätsgarantie
7*24 Stunden-Servicegarantie
90-Tage Kundendienstgarantie
Originalproduktgarantie
Spezifikationen
| Attribut | Wert |
| Package / Case | Tray,Tray |
| Series | GL-P |
| Part Status | Active |
| Memory Type | Non-Volatile |
| Memory Format | FLASH |
| Technology | FLASH - NOR |
| Memory Size | 256Mb (32M x 8) |
| Memory Interface | Parallel |
| Write Cycle Time - Word Page | 100ns |
| Access Time | 100 ns |
| Voltage - Supply | 2.7V ~ 3.6V |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Mounting Type | Surface Mount |
Übersicht
Description
Key features include a fast programming time and high-speed read capabilities, with a typical access time of 90 nanoseconds. The memory is organized in a uniform sector architecture, providing flexibility for code and data storage. It supports standard parallel NOR Flash interfaces and is compatible with a wide range of microprocessors and microcontrollers.
The S29GL256P10TFI020 offers advanced security features like sector protection and a secure silicon sector for additional data protection. It also supports various command sets like Common Flash Interface (CFI) and provides a high endurance with a specified number of program/erase cycles, ensuring reliable performance over time.
Equivalent
1. Micron MT28F256J3
2. Winbond W29GL256
3. Macronix MX29GL256F
4. SST (Microchip) SST39VF3201C
These alternatives offer similar specifications in terms of memory capacity, voltage, and access time, but always verify compatibility with your specific application requirements.
Features
1. Architecture: It features a uniform 64 KB sector architecture, making it suitable for applications requiring high reliability and flexibility in data management.
2. Interface: The device supports a parallel NOR flash interface, allowing for fast read and write operations.
3. Power Supply: It operates on a single 3.0-volt power supply, which simplifies power design and reduces power consumption.
4. Performance: It offers fast access times, typically around 90 ns, and supports multiple read and write operations with low latency.
5. Reliability: Enhanced data protection features include a hardware reset pin and sector protection to prevent accidental programming or erasure.
6. Temperature Range: It is designed to operate in industrial temperature ranges, typically from -40°C to 85°C, making it suitable for harsh environments.
7. Endurance: The device supports a high number of program/erase cycles, contributing to its durability and long lifespan.
These features make the S29GL256P10TFI020 suitable for various applications, including embedded systems, consumer electronics, and industrial control systems.
Pinout
1. Address Pins (A0-A23): Used to input the address of the memory location to be accessed.
2. Data Pins (DQ0-DQ15): Serve as the input/output pins for data.
3. Chip Enable (CE#): Activates the chip when low.
4. Output Enable (OE#): Enables data output when low.
5. Write Enable (WE#): Controls write operations.
6. Reset (RESET#): Resets the device when low.
7. Write Protect (WP#): Provides hardware protection for the first or last sector.
8. RY/BY#: Indicates the device operation status (ready/busy).
9. VCC: Positive power supply.
10. VSS: Ground reference.
These pins allow the device to perform read, write, and erase operations, making it suitable for applications requiring non-volatile storage.