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S29GL256P11TFIV10
+StücklisteIC FLASH 256MBIT PARALLEL 56TSOP
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HerstellerInfineon-Technologien
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Herstellerteil #S29GL256P11TFIV10
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Datenblatt S29GL256P11TFIV10 DataSheet
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Auf Lager8476
365 Tage Qualitätsgarantie
7*24 Stunden-Servicegarantie
90-Tage Kundendienstgarantie
Originalproduktgarantie
Spezifikationen
| Attribut | Wert |
| Series | GL-P |
| Part Status | Obsolete |
| Digi Key Programmable | Not Verified |
| Memory Type | Non-Volatile |
| Memory Format | FLASH |
| Technology | FLASH - NOR |
| Memory Size | 256Mbit |
| Memory Organization | 32M x 8 |
| Memory Interface | Parallel |
| Write Cycle Time - Word, Page | 110ns |
| Voltage - Supply | 1.65V ~ 3.6V |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Mounting Type | Surface Mount |
| Package / Case | 56-TFSOP (0.724", 18.40mm Width) |
| Supplier Device Package | 56-TSOP |
| Base Product Number | S29GL256 |
| Access Time | 110 ns |
Übersicht
Description
Key features of the S29GL256P11TFIV10 include fast read and write speeds, a high endurance of up to 100,000 program/erase cycles, and data retention of up to 20 years. It supports a variety of interfaces, including asynchronous, and offers sector erase capabilities for enhanced flexibility in data management. The device is designed for industrial temperature ranges, ensuring reliable operation in harsh environments. Its applications range from automotive systems to networking equipment and industrial electronics, where stable and non-volatile storage is crucial.
Equivalent
Features
1. Architecture: It uses a single power supply for read, erase, and program operations, simplifying system design.
2. Interface: It operates on a parallel interface, making it suitable for applications requiring quick data access.
3. Performance: The device offers a fast read access time of around 90 nanoseconds, which enhances performance in time-sensitive applications.
4. Sector Erase: It supports sector-based erase operations, allowing specific memory regions to be erased without affecting others.
5. Security Features: The device includes a hardware reset pin and a sector protection feature for data security.
6. Temperature Range: It is designed to operate in an extended temperature range (-40°C to 85°C), suitable for industrial applications.
7. Endurance: The memory supports a high endurance level with a specified number of program/erase cycles.
These features make the S29GL256P11TFIV10 suitable for use in embedded systems, telecommunications, and automotive applications where reliable and fast non-volatile memory is essential.
Pinout
### Pin Count:
- 64-ball FBGA package
### Functions:
- Data Storage: Stores up to 256 megabits of data.
- Parallel Interface: Allows for high-speed data access.
- Sector Erase and Programming: Supports sector-specific erase and programming operations.
- Read-While-Write: Allows reading operations in one bank while write/erase operations are happening in another.
- Enhanced Versatile I/O Control (VIO): Provides flexibility for a wide range of voltage levels.
- Boot Sector Architecture: Designed for easy boot code storage.
- Advanced Sector Protection: Includes hardware protection to prevent accidental erase/program operations.
This device is commonly used in applications requiring reliable data storage with high-speed access, such as embedded systems and communication devices.
Manufacturer
Cypress has been part of Infineon Technologies since 2020, following an acquisition. Infineon Technologies is a German semiconductor company that offers a broad array of semiconductor solutions, aiming to address energy efficiency, mobility, and security challenges in electronics.