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S29GL512T10TFI020
+StücklisteIC FLASH 512MBIT PARALLEL 56TSOP
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HerstellerInfineon-Technologien
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Herstellerteil #S29GL512T10TFI020
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Spezifikationen
| Attribut | Wert |
| Series | GL-T |
| Part Status | Active |
| Digi Key Programmable | Not Verified |
| Memory Type | Non-Volatile |
| Memory Format | FLASH |
| Technology | FLASH - NOR |
| Memory Size | 512Mbit |
| Memory Organization | 64M x 8 |
| Memory Interface | Parallel |
| Write Cycle Time - Word, Page | 60ns |
| Voltage - Supply | 2.7V ~ 3.6V |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Mounting Type | Surface Mount |
| Package / Case | 56-TFSOP (0.724", 18.40mm Width) |
| Supplier Device Package | 56-TSOP |
| Base Product Number | S29GL512 |
| Access Time | 100 ns |
Übersicht
Description
Operating at a 3.0V power supply, it supports high-speed programming and erasing with a 10ns access time, which ensures fast data retrieval and storage. The device utilizes a parallel NOR flash architecture, which is advantageous for executing code directly from the flash in embedded systems.
The S29GL512T10TFI020 includes advanced security features, such as sector protection and a unique device identifier, enhancing data integrity and security. It is packaged in a 56-pin TSOP (Thin Small Outline Package), favoring compact system designs.
Its robust endurance and data retention capabilities, combined with its low power consumption, make it ideal for consumer electronics, telecommunications, automotive, and industrial applications.
Equivalent
1. Micron MT28EW512ABA
2. Winbond W29GL512SC
3. Adesto (Dialog Semiconductor) AT25DL512
Ensure compatibility by checking the specific datasheets for pin configuration, voltage requirements, and performance specifications.
Features
1. Density and Organization: 512 Mb memory organized as 32M x 16 bits.
2. Voltage: Operates at a single 3.0V core voltage with I/O options for 3.0V.
3. Performance: Features a 10 ns page access time and 90 ns random access time.
4. Architecture: Utilizes a uniform 256 KB sector size, facilitating easier erase cycles.
5. Interface: Supports a parallel NOR interface, enhancing data access speed.
6. Endurance and Data Retention: Offers high endurance with up to 100,000 program/erase cycles and data retention of 20 years.
7. Security Features: Incorporates sector protection and a secured silicon sector for critical data storage.
8. Package Type: Available in TSOP (Thin Small Outline Package) form factor.
9. Temperature Range: Industrial temperature range from -40°C to +85°C.
These features make the S29GL512T10TFI020 suitable for various applications, including embedded systems, telecommunications, and industrial applications that require reliable and fast memory solutions.
Pinout
Key functions of this memory chip include:
- Address and Data Inputs/Outputs: Allows access to memory content.
- Chip Enable (CE#): Activates the chip when low.
- Output Enable (OE#): Enables data output from the device.
- Write Enable (WE#): Controls writing to the memory.
- Reset (RESET#): Resets the device to standby mode.
- Status Register: Provides status information about the device, such as whether it is busy or ready.
This Flash memory is typically used in applications requiring non-volatile storage, such as embedded systems, where data retention is crucial even when power is off.
Manufacturer
Application
1. Embedded Systems: Utilized for firmware storage in consumer electronics, industrial machinery, and automotive systems.
2. Networking: Stores configuration data and operating systems for routers, switches, and modems.
3. Consumer Electronics: Used in devices like smart TVs, set-top boxes, and gaming consoles for storing software and updates.
4. Medical Devices: Provides reliable storage for software in diagnostic equipment and monitoring devices.
5. Automotive: Used in infotainment systems, navigation, and engine control units (ECUs).
Its reliability and fast access times make it ideal for critical applications requiring frequent read operations.