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S34ML01G100BHI000
+StücklisteIC FLASH 1GBIT PARALLEL 63BGA
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HerstellerSpannweite
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Herstellerteil #S34ML01G100BHI000
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Datenblatt S34ML01G100BHI000 DataSheet
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Auf Lager4417
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Spezifikationen
| Attribut | Wert |
| Series | ML-1 |
| PartStatus | Active |
| DigiKeyProgrammable | Not Verified |
| MemoryType | Non-Volatile |
| MemoryFormat | FLASH |
| Technology | FLASH - NAND |
| MemorySize | 1Gbit |
| MemoryOrganization | 128M x 8 |
| MemoryInterface | Parallel |
| WriteCycleTime-Word,Page | 25ns |
| Voltage-Supply | 2.7V ~ 3.6V |
| OperatingTemperature | -40°C ~ 85°C (TA) |
| MountingType | Surface Mount |
| Package/Case | 63-VFBGA |
| SupplierDevicePackage | 63-BGA (11x9) |
| BaseProductNumber | S34ML01 |
Übersicht
Description
Key attributes include:
- Architecture: It typically employs a multi-level cell (MLC) or triple-level cell (TLC) structure, enhancing storage capacity while balancing performance and endurance.
- Performance: Offers fast read and write speeds, making it suitable for applications requiring quick data access.
- Durability: Built to withstand numerous write/erase cycles, ensuring longevity and reliability in demanding environments.
- Interface: SPI interface simplifies integration into various systems and allows for easier communication with microcontrollers and processors.
The S34ML01G100BHI000 is a versatile solution for applications requiring compact, reliable, and efficient storage solutions.
Equivalent
Features
1. Technology: Multi-level cell (MLC) NAND Flash, offering a balance between performance and density.
2. Interface: Supports asynchronous and synchronous interfaces, enabling flexible integration into various systems.
3. Density: 1 Gbit memory capacity, suitable for a range of applications.
4. Package: Available in a compact 48-ball FBGA package for space-constrained designs.
5. Read/Write Speed: High-speed read and write capabilities, enhancing overall system performance.
6. Endurance: Designed for high endurance, allowing a significant number of program/erase cycles.
7. Data Retention: Provides reliable data retention for extended periods, essential for non-volatile memory applications.
8. Power Management: Low power consumption in both active and standby modes, suitable for battery-operated devices.
These features make the S34ML01G100BHI000 ideal for applications in consumer electronics, industrial, and automotive sectors.
Pinout
The key functions of the pins include:
- Data Pins (D0-D7): Used for data input/output.
- Command Pins (CE, RE, WE): Control the chip enable, read enable, and write enable operations.
- Address Pins (A0-A19): Used to select the specific memory location within the chip.
- Status Pins (R/B): Provide status feedback regarding operation completion.
- VCC and VSS Pins: Supply power and ground connections for the device.
The device supports asynchronous memory operation, making it suitable for various applications, including embedded systems and consumer electronics. Its architecture allows for efficient and reliable data storage.
Manufacturer
The S34ML01G100BHI000 is a NAND flash memory chip, specifically designed for use in embedded applications, which are common in consumer electronics, automotive systems, and industrial devices. Micron is a key player in the memory sector and contributes significantly to advancements in technology, focusing on innovation in memory and storage solutions to meet the demands of various markets, including mobile devices, computing, and data center applications. The company emphasizes sustainability and strives to enhance the performance and efficiency of its products while maintaining high standards of quality and reliability.