S34ML01G200BHI000

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S34ML01G200BHI000

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IC FLASH 1GBIT PARALLEL 63BGA

  • HerstellerCypress Semiconductor Corp.

  • Herstellerteil #S34ML01G200BHI000

  • Paket VFBGA-63

  • Auf Lager1511

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Attribut Wert
Package / Case Tray
Series ML-2
Part Status Active
Memory Type Non-Volatile
Memory Format FLASH
Technology FLASH - NAND
Memory Size 1Gb (128M x 8)
Memory Interface Parallel
Write Cycle Time - Word Page 25ns
Voltage - Supply 2.7V ~ 3.6V
Operating Temperature -40°C ~ 85°C (TA)
Mounting Type Surface Mount

Übersicht

Description

The S34ML01G200BHI000 is a NAND Flash memory device produced by Cypress Semiconductor, now part of Infineon Technologies. It is designed for use in a variety of applications that require non-volatile storage, such as embedded systems, consumer electronics, and industrial devices. This specific model offers a capacity of 1 Gb (gigabit) and uses a single-level cell (SLC) architecture, which provides advantages in terms of speed, endurance, and reliability compared to multi-level cell (MLC) or triple-level cell (TLC) technologies.
The device operates on a 3.3V power supply and supports standard NAND interface protocols. It includes features like wear leveling, error correction code (ECC), and bad block management to enhance data integrity and longevity. The S34ML01G200BHI000 is available in a 48-pin TSOP (Thin Small Outline Package) format, making it suitable for compact designs. It is often chosen for applications that demand high performance and data retention reliability, such as automotive systems and critical infrastructure, due to its robust design and endurance characteristics.

Equivalent

The S34ML01G200BHI000 is a 1Gb NAND Flash memory chip by Cypress Semiconductor (now part of Infineon Technologies). Equivalent products are similar NAND Flash memory chips from other manufacturers, such as the MT29F1G08ABADAWP from Micron, K9F1G08U0D from Samsung, and the TC58NVG0S3HTA00 from Toshiba (now Kioxia). These alternatives have similar capacities and interfaces but may differ in terms of speed, endurance, or additional features. Always check the datasheets for compatibility.

Features

The S34ML01G200BHI000 is a NAND flash memory chip designed for electronic storage applications. Key features include:
1. Capacity: 1 Gigabit (Gb) of storage.
2. Architecture: Single-level cell (SLC) NAND, which offers high reliability and endurance.
3. Page Size: Typically 2048 bytes, with an additional 64 bytes for error correction and metadata.
4. Block Size: Composed of 64 pages, offering efficient erase operations.
5. Interface: Supports asynchronous NAND interface for compatibility with a range of controllers.
6. Performance: Designed for fast read and write operations, optimizing data throughput.
7. Endurance: Higher program/erase cycles compared to multi-level cells, ideal for applications requiring frequent updates.
8. Reliability: Built-in error correction code (ECC) support to ensure data integrity.
9. Voltage Range: Operates typically at 3.3V, suitable for various embedded applications.
10. Temperature Range: Industrial grade, supporting a wide temperature range for robust performance in different environments.
These features make it suitable for use in consumer electronics, industrial devices, and embedded systems where durability and reliability are crucial.

Pinout

The S34ML01G200BHI000 is a NAND Flash memory device from Cypress Semiconductor, part of the S34ML-1 series. It typically follows the standard for NAND Flash memory pin configurations. Here's a concise overview:
- Pin Count: The S34ML01G200BHI000 package is commonly available in a 48-pin TSOP package.
- Functions:
- I/O Pins (I/O0-I/O7): Data input/output pins used for transferring data to and from the memory.
- CLE (Command Latch Enable): Used to input command codes.
- ALE (Address Latch Enable): Used to latch address information.
- CE# (Chip Enable): Activates the device.
- RE# (Read Enable): Controls the data output.
- WE# (Write Enable): Controls the data input.
- WP# (Write Protect): Protects the memory from being written to.
- R/B# (Ready/Busy): Indicates device status.
- VCC: Power supply pin.
- VSS: Ground pin.
This configuration allows the device to perform standard NAND Flash operations like read, program, and erase. Always refer to the manufacturer’s datasheet for specific and detailed information.

Manufacturer

The S34ML01G200BHI000 is a NAND flash memory chip manufactured by Infineon Technologies. Infineon is a German semiconductor company that specializes in designing, developing, manufacturing, and marketing a broad range of semiconductor solutions. The company is known for its products that serve applications in automotive, industrial power control, power management, and digital security solutions. Infineon is recognized for its innovation and commitment to sustainability, providing essential technology that helps shape the future of electronics and improve the quality of life.

Application

The S34ML01G200BHI000 is a NAND flash memory chip commonly used in various applications. Its primary application areas include:
1. Consumer Electronics: Devices like smartphones, tablets, and digital cameras utilize this chip for data storage.
2. Industrial Systems: Used in industrial control systems and automation equipment for reliable data retention.
3. Automotive: Employed in infotainment systems and advanced driver-assistance systems (ADAS) for data storage needs.
4. Networking: Utilized in routers, switches, and networking equipment for firmware and configuration storage.
5. Computing: Integrated into laptops and desktops for SSDs and other storage solutions.
These application areas benefit from its high-density storage capacity and reliability.

Package

The S34ML01G200BHI000 is a NAND flash memory chip typically packaged in a TSOP (Thin Small Outline Package). This type of package is designed to be space-efficient, suitable for high-density applications, and offers surface-mount technology for easy integration into electronic devices.

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