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S34ML08G201BHI000
+StücklisteIC FLASH 8GBIT PARALLEL 63BGA
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HerstellerCypress Semiconductor Corp.
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Herstellerteil #S34ML08G201BHI000
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Paket BGA-63
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Auf Lager5913
365 Tage Qualitätsgarantie
7*24 Stunden-Servicegarantie
90-Tage Kundendienstgarantie
Originalproduktgarantie
Spezifikationen
| Attribut | Wert |
| Package / Case | Tray |
| Series | ML-2 |
| Part Status | Obsolete |
| Memory Type | Non-Volatile |
| Memory Format | FLASH |
| Technology | FLASH - NAND |
| Memory Size | 8Gb (1G x 8) |
| Memory Interface | Parallel |
| Write Cycle Time - Word Page | 25ns |
| Voltage - Supply | 2.7V ~ 3.6V |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Mounting Type | Surface Mount |
Übersicht
Description
The device operates with a single 3.3V power supply and supports standard NAND Flash commands and protocols, ensuring compatibility with a wide range of controllers. Its structure is based on multi-level cell (MLC) technology, allowing for higher storage density and cost-effectiveness compared to single-level cell (SLC) counterparts.
Additionally, it includes advanced error correction capabilities which enhance data integrity and reliability. The S34ML08G201BHI000 is designed for industrial environments, offering a broad operating temperature range. Its robust architecture and efficient power consumption make it an ideal choice for applications requiring large storage capacities with reliable performance.
Equivalent
Features
1. Capacity: 8 Gigabits (1 Gigabyte) of storage capacity.
2. Interface: Supports a standard NAND Flash interface for seamless integration.
3. Performance: Offers fast read and write capabilities, suitable for high-speed applications.
4. Technology: Built on advanced NAND technology with multi-level cell (MLC) architecture.
5. Data Retention: High data retention and endurance characteristics, ensuring longevity.
6. Package: Available in a 48-pin TSOP (Thin Small Outline Package) for compact deployment.
7. Voltage: Operates at a voltage range typically around 3.3V.
8. Error Correction: Integrates error correction mechanisms to maintain data integrity.
9. Temperature Range: Supports a wide operating temperature range, making it suitable for various environments.
This chip is commonly used in consumer electronics, industrial systems, and other devices requiring efficient and reliable flash memory storage.
Pinout
1. I/O Pins (I/O0-I/O7): These are used for data input and output.
2. CLE (Command Latch Enable): Activates the command interface.
3. ALE (Address Latch Enable): Activates the address interface.
4. CE# (Chip Enable): Enables the device.
5. RE# (Read Enable): Controls data output.
6. WE# (Write Enable): Controls data input.
7. WP# (Write Protect): Protects against unintended writes.
8. R/B# (Ready/Busy): Indicates device status.
9. VCC: Power supply.
10. VSS: Ground.
11. NC (No Connect): Unused pins.
These pin functions support basic operations like reading, writing, and erasing data in NAND Flash memory. For precise pin assignments and detailed functionality, consulting the manufacturer's datasheet is recommended.