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S34MS01G200GHI000
+StücklisteIC FLASH 1GBIT PARALLEL 67BGA
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HerstellerCypress Semiconductor Corp.
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Herstellerteil #S34MS01G200GHI000
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Paket VFBGA-67
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Auf Lager3799
365 Tage Qualitätsgarantie
7*24 Stunden-Servicegarantie
90-Tage Kundendienstgarantie
Originalproduktgarantie
Spezifikationen
| Attribut | Wert |
| Package / Case | Tray,Tray |
| Series | MS-2 |
| Part Status | Active |
| Memory Type | Non-Volatile |
| Memory Format | FLASH |
| Technology | FLASH - NAND |
| Memory Size | 1Gb (128M x 8) |
| Memory Interface | Parallel |
| Write Cycle Time - Word Page | 45ns |
| Access Time | 45 ns |
| Voltage - Supply | 1.7V ~ 1.95V |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Mounting Type | Surface Mount |
Übersicht
Description
Key features of the S34MS01G200GHI000 include a high-speed read-write performance, low power consumption, and enhanced endurance and reliability, making it suitable for intensive read/write operations and extended use. The device supports necessary error correction mechanisms, ensuring data integrity during storage and retrieval.
The S34MS01G200GHI000 operates within a wide temperature range, making it adaptable for various environmental conditions. Its compact package size is beneficial for space-constrained applications, while its compatibility with industry standards ensures ease of use in design and development processes. Overall, the S34MS01G200GHI000 is a versatile and reliable choice for applications requiring robust and efficient NAND Flash memory solutions.
Equivalent
1. Micron MT29F1G08ABADAWP: A 1Gb NAND Flash chip from Micron.
2. Toshiba TC58NVG1S3HTA00: A similar 1Gb NAND Flash memory from Toshiba.
3. Samsung K9F1G08U0D: A 1Gb NAND Flash memory chip from Samsung.
These products are comparable in terms of capacity and function, but differences in performance and specific features may exist. Always check datasheets for compatibility.
Features
Key features include:
1. High Endurance: Thanks to the SLC technology, the chip provides a high program/erase cycle count, making it suitable for industrial and embedded applications.
2. Fast Performance: It offers rapid read and write operations, essential for applications requiring quick access to data.
3. Error Correction: Built-in error correction mechanisms improve data integrity and reliability.
4. Operating Temperature Range: Well-suited for various environments, it typically supports a wide operating temperature range.
5. Compact Package: Its compact form factor makes it ideal for space-constrained applications.
These features make the S34MS01G200GHI000 ideal for devices requiring robust and reliable memory solutions.
Pinout
The primary functions of the pins are as follows:
- Data I/O Pins (DQ0-DQ7): These are used for input and output of data.
- Address Latch Enable (ALE): Used to latch the address input.
- Command Latch Enable (CLE): Used to latch the command input.
- Chip Enable (CE#): Enables the chip for reading or writing.
- Write Enable (WE#): Controls the writing process.
- Read Enable (RE#): Controls the reading process.
- Ready/Busy (R/B#): Indicates the status of the device (ready or busy).
- Write Protect (WP#): Protects the device from inadvertent writes.
- Power Supply Pins (VCC, VSS): Provide power and ground connections.
These pins allow the memory chip to perform operations such as reading, writing, and erasing data, essential for its role in storing data in embedded systems and other applications.