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IC FLASH 4GBIT PARALLEL 63BGA
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HerstellerCypress Semiconductor Corp.
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Herstellerteil #S34MS04G200BHI000
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Paket BGA-63
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Auf Lager4870
365 Tage Qualitätsgarantie
7*24 Stunden-Servicegarantie
90-Tage Kundendienstgarantie
Originalproduktgarantie
Spezifikationen
| Attribut | Wert |
| Package / Case | Tray |
| Series | MS-2 |
| Part Status | Discontinued at Digi-Key |
| Memory Type | Non-Volatile |
| Memory Format | FLASH |
| Technology | FLASH - NAND |
| Memory Size | 4Gb (512M x 8) |
| Memory Interface | Parallel |
| Write Cycle Time - Word Page | 45ns |
| Access Time | 45 ns |
| Voltage - Supply | 1.7V ~ 1.95V |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Mounting Type | Surface Mount |
Übersicht
Description
Key features include a 4 Gb (gigabit) storage capacity, which is arranged into multiple pages and blocks for efficient data management. It utilizes a Serial Peripheral Interface (SPI) for communication, offering a simpler interface compared to parallel NAND, which reduces pin count and board space. The chip supports fast read and write operations, with enhanced reliability through error correction code (ECC) capabilities to ensure data integrity.
The S34MS04G200BHI000 operates across a wide temperature range, making it suitable for challenging environments. It is packaged in a small footprint, making it ideal for space-constrained applications. Overall, this NAND Flash memory chip provides a balance of performance, reliability, and cost-effectiveness, catering to a diverse range of embedded storage needs.
Equivalent
Features
1. Capacity: 4 Gb (Gigabits).
2. Interface: Asynchronous NAND Flash interface supporting standard NAND command set.
3. Voltage Range: Operates at a voltage range of 2.7V to 3.6V, suitable for battery-powered applications.
4. Performance: Offers high-speed read and write capabilities, enhancing system performance.
5. Reliability: Includes error correction code (ECC) to ensure data integrity and longevity.
6. Endurance: Provides a high program/erase cycle endurance, typical of NAND flash memory.
7. Package: Available in a 48-TSOP I package, which is compact and space-efficient.
8. Operating Temperature: Supports a wide temperature range suitable for various industrial applications.
This chip is ideal for applications requiring robust data storage, such as consumer electronics, industrial systems, and automotive solutions.
Pinout
- Data I/O (I/Os): Typically 8 pins (I/O0 to I/O7) for data input/output.
- Control Signals:
- CLE (Command Latch Enable)
- ALE (Address Latch Enable)
- CE# (Chip Enable)
- RE# (Read Enable)
- WE# (Write Enable)
- WP# (Write Protect)
- R/B# (Ready/Busy)
- Power Supply:
- VCC (Power)
- VSS (Ground)
The primary function of this NAND Flash memory is to store data non-volatilely, meaning that it retains data without power. It's used in various applications such as solid-state drives, USB drives, and other embedded systems requiring reliable data storage. The device supports standard NAND flash operations and is designed for high-density storage applications.
Manufacturer
Application
1. Consumer Electronics: Smartphones, tablets, and digital cameras use this chip for storing data, apps, and media.
2. Industrial Applications: Used in embedded systems for data logging, firmware storage, and industrial automation.
3. Automotive Systems: Provides storage for infotainment systems, navigation, and advanced driver-assistance systems (ADAS).
4. Networking Equipment: Used in routers, switches, and other networking devices for firmware storage and caching.
5. Solid-State Drives (SSDs): Utilized in SSDs for laptops and desktops to enhance storage capacity and performance.
Its robust performance and reliability make it suitable for diverse technological applications.