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SCT040W65G3-4AG
+StücklisteAUTOMOTIVE-GRADE SILICON CARBIDE
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HerstellerSTMikroelektronik
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Herstellerteil #SCT040W65G3-4AG
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Auf Lager17978
365 Tage Qualitätsgarantie
7*24 Stunden-Servicegarantie
90-Tage Kundendienstgarantie
Originalproduktgarantie
Spezifikationen
| Attribut | Wert |
| Part Status | Active |
| Base Product Number | SCT040 |
| FET Type | N-Channel |
| Technology | SiCFET (Silicon Carbide) |
| Drain to Source Voltage (Vdss) | 650 V |
| Current - Continuous Drain (Id) @ 25°C | 30A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 15V, 18V |
| Rds On (Max) @ Id, Vgs | 63mOhm @ 20A, 18V |
| Vgs(th) (Max) @ Id | 4.2V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs | 37.5 nC @ 18 V |
| Vgs (Max) | +18V, -5V |
| Input Capacitance (Ciss) (Max) @ Vds | 860 pF @ 400 V |
| Power Dissipation (Max) | 240W (Tc) |
| Operating Temperature | -55°C ~ 200°C (TJ) |
| Grade | Automotive |
| Qualification | AEC-Q101 |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-247-4 |
| Package / Case | TO-247-4 |
| Packaging | Tube |
