SCT070W120G3AG

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SCT070W120G3AG

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SIC MOSFET

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Attribut Wert
Series ECOPACK®
Part Status Active
FET Type N-Channel
Technology SiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss) 1200 V
Current - Continuous Drain (Id) @ 25°C 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 15V, 18V
Rds On (Max) @ Id, Vgs 87mOhm @ 15A, 18V
Vgs(th) (Max) @ Id 4.2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 41 nC @ 18 V
Vgs (Max) +18V, -5V
Input Capacitance (Ciss) (Max) @ Vds 900 pF @ 850 V
Power Dissipation (Max) 236W (Tc)
Operating Temperature -55°C ~ 200°C (TJ)
Grade Automotive
Qualification AEC-Q101
Mounting Type Through Hole
Supplier Device Package HiP247™
Package / Case TO-247-3

Übersicht

Description

The SCT070W120G3AG is a high-performance, 1200V silicon carbide (SiC) MOSFET designed for power electronic applications. It features low on-resistance and fast switching capabilities, making it suitable for use in energy-efficient systems such as electric vehicles, renewable energy converters, and industrial power supplies.
Key specifications include a maximum continuous drain current of around 70A and a gate threshold voltage optimized for efficient drive characteristics. The device is characterized by a high thermal conductivity, enabling effective heat dissipation and improved reliability in demanding environments.
Due to its wide bandgap properties, the SCT070W120G3AG operates effectively at high temperatures and frequencies, providing significant advantages over traditional silicon MOSFETs. Its compact packaging allows for space-efficient designs in modern power electronics. Overall, this SiC MOSFET is an ideal choice for applications requiring high efficiency, robustness, and compactness.

Equivalent

The SCT070W120G3AG is a SiC MOSFET from Littelfuse. Equivalent products include the ON Semiconductor NTMFS5C120N, STMicroelectronics STP120N75M5, and Infineon’s IMW120R045M1. Always verify specifications such as voltage, current rating, and package type to ensure compatibility in your application.

Features

The SCT070W120G3AG is a high-performance Silicon Carbide (SiC) MOSFET designed for power applications. Key features include:
1. Voltage Rating: 1200V, suitable for high-voltage applications.
2. Current Rating: Capable of handling high current levels, improving efficiency in power conversion.
3. Low On-State Resistance: Ensures minimal conduction losses, enhancing overall system efficiency.
4. Fast Switching Speed: Reduces switching losses, ideal for high-frequency applications.
5. High Thermal Conductivity: Facilitates better heat dissipation, which is critical in demanding environments.
6. Robustness: Designed for high reliability in harsh conditions, making it suitable for industrial and automotive applications.
7. Gate Threshold Voltage: Optimized for compatibility with standard drive circuits.
These features make the SCT070W120G3AG an excellent choice for applications such as inverters, power supplies, and electric vehicle systems.

Pinout

The SCT070W120G3AG is a Silicon Carbide (SiC) MOSFET produced by ON Semiconductor. It features a pin count of 8.
The primary functions of the device include:
1. Switching: Used in applications requiring high efficiency and fast switching capabilities, particularly in power conversion and motor drive applications.
2. High Voltage Operation: Rated for 1200V, making it suitable for high-voltage applications.
3. Thermal Performance: Designed for high thermal conductivity, allowing for effective heat management in demanding environments.
4. Low R_DS(on): Provides low on-resistance, which contributes to reduced conduction losses.
The pin configuration typically includes gate, drain, and source connections, facilitating integration into various electronic circuits. Always refer to the specific datasheet for detailed electrical characteristics and application guidelines.

Manufacturer

The SCT070W120G3AG is manufactured by SCT, a company specializing in power semiconductor devices. SCT focuses on developing and producing high-performance semiconductor solutions, particularly in the field of power electronics, which includes products such as MOSFETs, IGBTs, and diodes. Their devices are commonly used in various applications, including renewable energy systems, automotive electronics, and industrial control systems.
SCT operates in the semiconductor industry, catering to sectors that require efficient power management and conversion solutions. The company emphasizes innovation and reliability in its product offerings, aiming to meet the growing demands for energy efficiency and sustainable technology in modern electronics.

Application

The SCT070W120G3AG is a silicon carbide (SiC) MOSFET primarily used in high-efficiency power applications. Its application areas include:
1. Industrial Power Supplies: Enhancing efficiency in converters and inverters.
2. Electric Vehicles (EVs): Used in traction inverters and charging stations.
3. Renewable Energy Systems: Power converters for solar inverters and wind energy systems.
4. Telecommunications: Efficient power management in base stations.
5. HVAC Systems: Improving energy efficiency in heating and cooling applications.
Its high voltage capability and thermal performance make it ideal for demanding environments.

Package

The SCT070W120G3AG is packaged in a TO-247 format. This type of package is typically used for high-power applications, providing good thermal performance and ease of mounting on heatsinks.

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