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SCT10N120H
+StücklisteSICFET N-CH 1200V 12A H2PAK-2
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HerstellerSTMikroelektronik
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Herstellerteil #SCT10N120H
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Auf Lager2024
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Originalproduktgarantie
Spezifikationen
| Attribut | Wert |
| Supplier | STMicroelectronics |
| Package | Tape & Reel (TR),Cut Tape (CT) |
| ProductStatus | Obsolete |
| FETType | N-Channel |
| Technology | SiCFET (Silicon Carbide) |
| DraintoSourceVoltage(Vdss) | 1200 V |
| Current-ContinuousDrain(Id)@25°C | 12A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 20V |
| RdsOn(Max)@IdVgs | 690mOhm @ 6A, 20V |
| Vgs(th)(Max)@Id | 3.5V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 22 nC @ 20 V |
| Vgs(Max) | +25V, -10V |
| InputCapacitance(Ciss)(Max)@Vds | 290 pF @ 400 V |
| PowerDissipation(Max) | 150W (Tc) |
| OperatingTemperature | -55°C ~ 200°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | H2Pak-2 |
