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SCT2120AFC
+StücklisteSICFET N-CH 650V 29A TO220AB
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HerstellerRohm Halbleiter
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Herstellerteil #SCT2120AFC
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Datenblatt SCT2120AFC DataSheet
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Auf Lager8185
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Spezifikationen
| Attribut | Wert |
| Supplier | Rohm Semiconductor |
| Package / Case | Tube |
| Part Status | Obsolete |
| FET Type | N-Channel |
| Technology | SiCFET (Silicon Carbide) |
| Drain to Source Voltage (Vdss) | 650 V |
| Current - Continuous Drain(Id) @ 25°C | 29A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 18V |
| Rds On(Max) @ Id Vgs | 156mOhm @ 10A, 18V |
| Vgs(th)(Max) @ Id | 4V @ 3.3mA |
| Gate Charge(Qg)(Max) @ Vgs | 61 nC @ 18 V |
| Vgs(Max) | +22V, -6V |
| Input Capacitance(Ciss)(Max) @ Vds | 1200 pF @ 500 V |
| Power Dissipation (Max) | 165W (Tc) |
| Operating Temperature | 175°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220AB |
