SCT3080KLGC11

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SCT3080KLGC11

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SICFET N-CH 1200V 31A TO247N

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Spezifikationen

Attribut Wert
Package / Case Tube
Part Status Active
FET Type N-Channel
Technology SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 1200 V
Current - Continuous Drain(Id) @ 25°C 31A (Tc)
Drive Voltage(Max Rds On Min Rds On) 18V
Rds On(Max) @ Id Vgs 104mOhm @ 10A, 18V
Vgs(th)(Max) @ Id 5.6V @ 5mA
Gate Charge(Qg)(Max) @ Vgs 60 nC @ 18 V
Vgs(Max) +22V, -4V
Input Capacitance(Ciss)(Max) @ Vds 785 pF @ 800 V
Power Dissipation (Max) 165W (Tc)
Operating Temperature 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-247N

Übersicht

Description

The SCT3080KLGC11 is a silicon carbide (SiC) power MOSFET from ROHM Semiconductor, designed for high-efficiency power applications. Key features include:
- Voltage Rating: 650V
- Current Rating: 30A (continuous)
- Low On-Resistance: 80mΩ (typ.)
- Fast Switching: Optimized for high-frequency operation
- Robustness: High thermal conductivity and reliability
It is ideal for solar inverters, industrial power supplies, and EV charging systems, leveraging SiC technology for reduced losses and improved thermal performance. The TO-247-4L package minimizes switching noise and enhances heat dissipation.
For detailed specs, refer to the datasheet or ROHM’s official documentation.

Equivalent

Equivalent products to the SCT3080KLGC11 (a 80V, 30A SiC MOSFET from ROHM) include:
- C3M0065090D (Wolfspeed)
- SCT3040KL (ROHM)
- IPW65R080CFD7 (Infineon)
- STPSC20H065DY (STMicroelectronics)
These alternatives offer similar voltage/current ratings or SiC technology. Verify specs for exact compatibility.

Features

The SCT3080KLGC11 is a silicon carbide (SiC) MOSFET with the following key features:
- Voltage Rating: 650V
- Current Rating: 21A (continuous)
- Low On-Resistance: 80mΩ (typ.)
- Fast Switching: Optimized for high-frequency applications
- Low Gate Charge (Qg): Enhances efficiency
- High Temperature Operation: Up to 175°C
- Avalanche Energy Rated: Robust against voltage spikes
- TO-247-3 Package: Suitable for high-power applications
Designed for high-efficiency power conversion in industrial, automotive, and renewable energy systems.

Manufacturer

The SCT3080KLGC11 is a silicon carbide (SiC) MOSFET manufactured by ROHM Semiconductor, a Japanese company specializing in semiconductors and electronic components.
ROHM is a well-established firm known for its high-quality power devices, analog ICs, and sensors. It is a leader in SiC technology, providing efficient and reliable components for automotive, industrial, and energy applications. The SCT3080KLGC11 is part of ROHM’s SiC MOSFET lineup, designed for high-power, high-efficiency systems like EV chargers and power supplies.
ROHM is recognized for innovation and vertical integration, producing its own SiC wafers to ensure performance and supply stability.

Application

The SCT3080KLGC11 is a silicon carbide (SiC) MOSFET designed for high-efficiency power applications. Key application areas include:
- Electric Vehicles (EVs): On-board chargers, DC-DC converters, and traction inverters.
- Renewable Energy: Solar inverters and wind power systems.
- Industrial Power Supplies: High-frequency SMPS, UPS, and motor drives.
- Data Centers: High-efficiency server power supplies.
- Fast Charging: EV charging stations and high-power adapters.
Its 1200V/80mΩ rating and SiC technology enable high switching speeds, thermal stability, and energy efficiency in demanding environments.

Package

The SCT3080KLGC11 is a TO-263-7L (D2PAK-7L) package type. It's a surface-mount, 7-lead variant of the D2PAK (TO-263) family, designed for high-power applications with efficient thermal dissipation. The package includes a large exposed pad for heat sinking.

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