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SCT3080KRC14
+StücklisteSICFET N-CH 1200V 31A TO247-4L
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HerstellerRohm Halbleiter
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Herstellerteil #SCT3080KRC14
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Spezifikationen
| Attribut | Wert |
| Supplier | Rohm Semiconductor |
| Package / Case | Tube |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | SiCFET (Silicon Carbide) |
| Drain to Source Voltage (Vdss) | 1200 V |
| Current - Continuous Drain(Id) @ 25°C | 31A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 18V |
| Rds On(Max) @ Id Vgs | 104mOhm @ 10A, 18V |
| Vgs(th)(Max) @ Id | 5.6V @ 5mA |
| Gate Charge(Qg)(Max) @ Vgs | 60 nC @ 18 V |
| Vgs(Max) | +22V, -4V |
| Input Capacitance(Ciss)(Max) @ Vds | 785 pF @ 800 V |
| Power Dissipation (Max) | 165W |
| Operating Temperature | 175°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-247-4L |
