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SCTW90N65G2V
+StücklisteSICFET N-CH 650V 90A HIP247
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HerstellerSTMikroelektronik
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Herstellerteil #SCTW90N65G2V
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Datenblatt SCTW90N65G2V DataSheet
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Paket TO-247-3
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Spezifikationen
| Attribut | Wert |
| Package | Tube |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | SiCFET (Silicon Carbide) |
| DraintoSourceVoltage(Vdss) | 650 V |
| Current-ContinuousDrain(Id)@25°C | 90A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 18V |
| RdsOn(Max)@IdVgs | 25mOhm @ 50A, 18V |
| Vgs(th)(Max)@Id | 5V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 157 nC @ 18 V |
| Vgs(Max) | +22V, -10V |
| InputCapacitance(Ciss)(Max)@Vds | 3300 pF @ 400 V |
| PowerDissipation(Max) | 390W (Tc) |
| OperatingTemperature | -55°C ~ 200°C (TJ) |
| MountingType | Through Hole |
| SupplierDevicePackage | HiP247™ |
Übersicht
Description
- Low on-resistance (RDS(on)): 25 mΩ (typ.) for reduced conduction losses.
- Fast switching: Optimized for high-frequency operation, minimizing switching losses.
- High-temperature operation: Robust performance up to 175°C.
- Body diode with low reverse recovery (Qrr): Enhances efficiency in hard-switching topologies.
Ideal for EV chargers, solar inverters, and industrial power supplies, it improves system efficiency and power density. The TO-247-4L package reduces parasitic inductance, further optimizing switching performance.
For detailed specs, refer to the datasheet on STMicroelectronics' website.
Equivalent
- C3M0065090D (Wolfspeed)
- SCT3040KL (ROHM)
- IDW30G65C5 (Infineon)
- STPSC10H065DY (STMicroelectronics)
These are similar 650V SiC MOSFETs with comparable current ratings. Verify specs like RDS(on), gate charge, and package for exact replacement.
Features
- Voltage & Current Ratings: 650V drain-source voltage (V_DS), 90A continuous drain current (I_D).
- Low On-Resistance: 25mΩ typical (R_DS(on)) at 10V gate drive, reducing conduction losses.
- Fast Switching: Optimized for high-frequency operation, minimizing switching losses.
- High Temperature Operation: Robust performance up to 175°C junction temperature.
- Body Diode: Integrated fast-recovery body diode with low reverse recovery charge (Q_rr).
- Package: TO-247-4L (4-pin), with Kelvin source for improved gate control.
Ideal for EV chargers, solar inverters, and industrial SMPS, it enhances efficiency and power density.
Pinout
1. Gate (G): Controls the switching operation.
2. Drain (D): Main current-carrying terminal (connected to the load).
3. Source (S): Common return path for current.
Key Features:
- 650V breakdown voltage
- 90A continuous drain current
- Low on-resistance (RDS(on)) for high efficiency
- Designed for high-power applications like motor drives, inverters, and power supplies.
This N-channel MOSFET is optimized for fast switching and robust performance.
Manufacturer
STMicroelectronics specializes in designing and producing a wide range of semiconductor solutions, including microcontrollers, sensors, power devices, and advanced SiC components for automotive, industrial, and energy applications. The company is known for its innovation in energy-efficient and high-performance electronics.
The SCTW90N65G2V is part of ST’s SiC MOSFET portfolio, optimized for high-power, high-frequency applications like electric vehicles and renewable energy systems.
