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SE10FJHM3/H
+StücklisteDIODE GEN PURP 600V 1A DO219AB
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HerstellerVishay General Semiconductor-Diodes Division
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Herstellerteil #SE10FJHM3/H
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Datenblatt SE10FJHM3/H DataSheet
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Paket DO-219AB
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Auf Lager7790
365 Tage Qualitätsgarantie
7*24 Stunden-Servicegarantie
90-Tage Kundendienstgarantie
Originalproduktgarantie
Spezifikationen
| Attribut | Wert |
| Supplier | Vishay General Semiconductor - Diodes Division |
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | Automotive, AEC-Q101 |
| ProductStatus | Active |
| DiodeType | Standard |
| Voltage-DCReverse(Vr)(Max) | 600 V |
| Current-AverageRectified(Io) | 1A |
| Voltage-Forward(Vf)(Max)@If | 1.05 V @ 1 A |
| Speed | Standard Recovery >500ns, > 200mA (Io) |
| ReverseRecoveryTime(trr) | 780 ns |
| Current-ReverseLeakage@Vr | 5 µA @ 600 V |
| Capacitance@VrF | 7.5pF @ 4V, 1MHz |
| MountingType | Surface Mount |
| Package/Case | DO-219AB |
| SupplierDevicePackage | DO-219AB (SMF) |
