SH8M41GZETB

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SH8M41GZETB

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MOSFET N/P-CH 80V 3.4A/2.6A 8SOP

365 Tage Qualitätsgarantie

7*24 Stunden-Servicegarantie

90-Tage Kundendienstgarantie

Originalproduktgarantie

Spezifikationen

Attribut Wert
Supplier Rohm Semiconductor
Package / Case Cut Tape (CT)
Part Status Not For New Designs
FET Type N and P-Channel
FET Feature Logic Level Gate, 4V Drive
Drain to Source Voltage (Vdss) 80V
Current - Continuous Drain(Id) @ 25°C 3.4A, 2.6A
Rds On(Max) @ Id Vgs 130mOhm @ 3.4A, 10V
Vgs(th)(Max) @ Id 2.5V @ 1mA
Gate Charge(Qg)(Max) @ Vgs 9.2nC @ 5V
Input Capacitance(Ciss)(Max) @ Vds 600pF @ 10V
Power - Max 2W
Operating Temperature 150°C (TJ)
Mounting Type Surface Mount

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