Abbildungen dienen nur als Referenz
SI1012R-T1-GE3
+StücklisteMOSFET N-CH 20V 500MA SC75A
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HerstellerVishay Siliconix
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Herstellerteil #SI1012R-T1-GE3
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Auf Lager17278
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Spezifikationen
| Attribut | Wert |
| Supplier | Vishay Siliconix |
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | TrenchFET® |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 20 V |
| Current-ContinuousDrain(Id)@25°C | 500mA (Ta) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 1.8V, 4.5V |
| RdsOn(Max)@IdVgs | 700mOhm @ 600mA, 4.5V |
| Vgs(th)(Max)@Id | 900mV @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 0.75 nC @ 4.5 V |
| Vgs(Max) | ±6V |
| PowerDissipation(Max) | 150mW (Ta) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | SC-75A |
Übersicht
Description
"Introduction to SI1012R-T1-GE3" likely refers to a course or module code used in an academic setting, possibly at a university or college. While specific details about the course aren't provided in the code itself, we can make some general assumptions based on common academic practices:
- SI1012R: This could be a program or department code followed by a course identifier. "SI" might stand for a subject, like "Science" or "Statistics," while "1012R" typically denotes an introductory or foundational course.
- T1: This may indicate the term or semester in which the course is offered, such as Term 1.
- GE3: This could refer to General Education requirements, level 3, suggesting that the course fulfills certain curriculum requirements and might cater to students from various disciplines.
For precise details, such as the subject matter or prerequisites, it would be necessary to consult the institution's course catalog or contact the relevant department.
- SI1012R: This could be a program or department code followed by a course identifier. "SI" might stand for a subject, like "Science" or "Statistics," while "1012R" typically denotes an introductory or foundational course.
- T1: This may indicate the term or semester in which the course is offered, such as Term 1.
- GE3: This could refer to General Education requirements, level 3, suggesting that the course fulfills certain curriculum requirements and might cater to students from various disciplines.
For precise details, such as the subject matter or prerequisites, it would be necessary to consult the institution's course catalog or contact the relevant department.
Equivalent
The SI1012R-T1-GE3 is a P-channel MOSFET produced by Vishay. Equivalent products include:
1. FDN5618P by ON Semiconductor
2. IRLML6401 by Infineon Technologies
3. NTR4003N by ON Semiconductor
4. PMV16XNR by Nexperia
5. SSM3J332R by Toshiba
These alternatives are similar in terms of voltage, current ratings, and package types, but always verify the datasheet compatibility for your specific application needs.
1. FDN5618P by ON Semiconductor
2. IRLML6401 by Infineon Technologies
3. NTR4003N by ON Semiconductor
4. PMV16XNR by Nexperia
5. SSM3J332R by Toshiba
These alternatives are similar in terms of voltage, current ratings, and package types, but always verify the datasheet compatibility for your specific application needs.
Features
The SI1012R-T1-GE3 is a silicon-based N-channel MOSFET transistor designed for use in power management applications. Key features of this component include:
1. Voltage and Current Ratings: It typically operates with a drain-source voltage (V_DS) of up to 100V and a maximum continuous drain current (I_D) of around 1.2A, making it suitable for moderate power applications.
2. Low On-Resistance: This MOSFET offers low on-resistance, which ensures minimal power loss and efficient performance.
3. Fast Switching Speed: It is designed to provide fast switching capabilities, contributing to energy-efficient operation in various circuits.
4. Package Type: The SI1012R-T1-GE3 is commonly packaged in a compact and thermally efficient configuration, such as a SOT-23 surface-mount package, which is ideal for space-constrained applications.
5. Applications: It's used in a variety of electronic devices and systems, including DC-DC converters, load switches, and other power control applications.
These features collectively support its use in enhancing the performance and efficiency of electronic circuits.
1. Voltage and Current Ratings: It typically operates with a drain-source voltage (V_DS) of up to 100V and a maximum continuous drain current (I_D) of around 1.2A, making it suitable for moderate power applications.
2. Low On-Resistance: This MOSFET offers low on-resistance, which ensures minimal power loss and efficient performance.
3. Fast Switching Speed: It is designed to provide fast switching capabilities, contributing to energy-efficient operation in various circuits.
4. Package Type: The SI1012R-T1-GE3 is commonly packaged in a compact and thermally efficient configuration, such as a SOT-23 surface-mount package, which is ideal for space-constrained applications.
5. Applications: It's used in a variety of electronic devices and systems, including DC-DC converters, load switches, and other power control applications.
These features collectively support its use in enhancing the performance and efficiency of electronic circuits.
Pinout
The SI1012R-T1-GE3 is a P-channel MOSFET manufactured by Vishay Siliconix. It typically comes in a small SOT-23 package, which is a commonly used surface-mount package for transistors and typically has 3 pins. The pins for the SI1012R-T1-GE3 are configured as follows:
1. Gate (G) - This pin is used to control the MOSFET. By applying a voltage to the gate, you can turn the MOSFET on or off.
2. Source (S) - This pin is the source terminal of the MOSFET. For a P-channel MOSFET, the source is typically connected to the higher voltage side of the circuit.
3. Drain (D) - This is the terminal through which the load current flows when the MOSFET is turned on.
The SI1012R-T1-GE3 is primarily used for switching applications and can handle relatively low current and voltage levels, making it suitable for small signal and low power applications.
1. Gate (G) - This pin is used to control the MOSFET. By applying a voltage to the gate, you can turn the MOSFET on or off.
2. Source (S) - This pin is the source terminal of the MOSFET. For a P-channel MOSFET, the source is typically connected to the higher voltage side of the circuit.
3. Drain (D) - This is the terminal through which the load current flows when the MOSFET is turned on.
The SI1012R-T1-GE3 is primarily used for switching applications and can handle relatively low current and voltage levels, making it suitable for small signal and low power applications.
Manufacturer
The SI1012R-T1-GE3 is manufactured by Vishay Intertechnology, Inc. Vishay is a prominent global manufacturer of discrete semiconductors and passive electronic components. The company provides a wide range of products, including diodes, MOSFETs, optoelectronics, resistors, inductors, and capacitors. Vishay's components are used in various industries, such as automotive, industrial, computing, consumer electronics, telecommunications, and medical. Founded in 1962, Vishay has grown through acquisitions and organic growth to become a key supplier in the electronics industry, known for its robust product offerings and innovative technologies.
Application
The SI1012R-T1-GE3 is a Schottky diode commonly used in various electronic applications due to its fast switching speed and low forward voltage drop. It is often employed in power management systems, including DC-DC converters, voltage clamping, and reverse polarity protection. Additionally, it is suitable for use in RF systems for signal detection and mixing. Its efficient performance in high-frequency applications makes it ideal for use in communication devices, automotive electronics, and consumer electronics where efficient power conversion and signal integrity are critical.
Package
The SI1012R-T1-GE3 is a MOSFET transistor packaged in a SOT-23 configuration, which is a small, surface-mount package commonly used in electronic circuits for its space-saving attributes.
