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SI1034CX-T1-GE3
+StücklisteMOSFET 2N-CH 20V SC89-6
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HerstellerVishay Siliconix
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Herstellerteil #SI1034CX-T1-GE3
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Datenblatt SI1034CX-T1-GE3 DataSheet
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Paket SOT-666
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Auf Lager3917
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Spezifikationen
| Attribut | Wert |
| Supplier | Vishay Siliconix |
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | TrenchFET® |
| ProductStatus | Active |
| FETType | 2 N-Channel (Dual) |
| FETFeature | Logic Level Gate |
| DraintoSourceVoltage(Vdss) | 20V |
| Current-ContinuousDrain(Id)@25°C | 610mA (Ta) |
| RdsOn(Max)@IdVgs | 396mOhm @ 500mA, 4.5V |
| Vgs(th)(Max)@Id | 1V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 2nC @ 8V |
| InputCapacitance(Ciss)(Max)@Vds | 43pF @ 10V |
| Power-Max | 220mW |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| Package/Case | SOT-563, SOT-666 |
Übersicht
Description
For a product like an electronic component, this introduction would cover key attributes like its function, compatibility, operating parameters (voltage, current, frequency), and the unique benefits it offers. It might also include integration guidance, industry standards compliance, and potential use cases in various applications.
If this is part of a course or training module, the introduction would outline the learning objectives, fundamental concepts to be covered, and the skills or knowledge that participants can expect to gain.
For a detailed understanding, reviewing the specific product datasheet, manual, or course syllabus would be recommended.
Equivalent
1. IRLML2502 - by Infineon Technologies (formerly International Rectifier)
2. BSS138 - by ON Semiconductor (also by other manufacturers)
3. DMN1018S - by Diodes Incorporated
Make sure to compare the datasheets for exact specifications as equivalent products may have slight variations in parameters.
Features
1. Type: N-channel MOSFET.
2. Voltage and Current Ratings: It typically has a drain-source voltage (V_DS) of up to 20V and a continuous drain current (I_D) around 3.5A to 4A, depending on the specific operating conditions.
3. On-Resistance (R_DS(on)): Low R_DS(on), typically around 50 milliohms, which minimizes energy loss during operation.
4. Package: Available in a compact SOT-23 package, facilitating use in space-constrained applications.
5. Threshold Voltage (V_GS(th)): Generally around 1V, allowing for lower gate drive voltages.
6. Capabilities: Suitable for high-speed switching and can be used in various applications including power management, load switching, and DC-DC converters.
These features make the SI1034CX-T1-GE3 a versatile component for portable and battery-powered devices, where efficiency and size are crucial.
Pinout
- Pin Count: 6 pins
- Pin Functions:
1. Pin 1: Source of MOSFET 1
2. Pin 2: Gate of MOSFET 1
3. Pin 3: Drain of MOSFET 2
4. Pin 4: Source of MOSFET 2
5. Pin 5: Gate of MOSFET 2
6. Pin 6: Drain of MOSFET 1
Each MOSFET in this dual configuration can be used for switching applications, and the device is typically designed for use in low-voltage applications with moderate power loads. The dual MOSFET configuration allows for more compact design in circuits that require multiple switching elements.