SI2309CDS-T1-E3

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SI2309CDS-T1-E3

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MOSFET P-CH 60V 1.6A SOT23-3

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Spezifikationen

Attribut Wert
Package / Case Tape & Reel (TR),Cut Tape (CT)
Series TrenchFET®
Part Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain(Id) @ 25°C 1.6A (Tc)
Drive Voltage(Max Rds On Min Rds On) 4.5V, 10V
Rds On(Max) @ Id Vgs 345mOhm @ 1.25A, 10V
Vgs(th)(Max) @ Id 3V @ 250µA
Gate Charge(Qg)(Max) @ Vgs 4.1 nC @ 4.5 V
Vgs(Max) ±20V
Input Capacitance(Ciss)(Max) @ Vds 210 pF @ 30 V
Power Dissipation (Max) 1W (Ta), 1.7W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package SOT-23-3 (TO-236)

Übersicht

Description

The SI2309CDS-T1-E3 is a P-channel MOSFET from Vishay Siliconix, designed for low-voltage, high-efficiency switching applications. Key features include:
- Voltage Rating: -20V (Drain-Source)
- Current Rating: -4.3A (Continuous Drain Current)
- Low On-Resistance: 50mΩ (max at VGS = -4.5V)
- Threshold Voltage: -1V (typical)
- Compact Package: SOT-23 (3-pin), ideal for space-constrained designs.
Commonly used in power management, load switching, battery protection, and DC-DC converters, it offers fast switching and low power loss. The T1-E3 suffix indicates tape-and-reel packaging for automated assembly.
For detailed specs, refer to the datasheet.

Equivalent

Equivalent products to the SI2309CDS-T1-E3 (P-channel MOSFET, 20V, 3.7A) include:
- AO3401A (20V, 4A)
- DMG2305UX (20V, 4.2A)
- IRLML6402 (12V, 3.7A)
- BSS84 (50V, 0.13A, lower current)
Check datasheets for exact specs before substitution.

Features

The SI2309CDS-T1-E3 is a P-channel MOSFET with the following key features:
- Voltage Rating: -20V (Drain-Source, VDS)
- Current Rating: -4.3A (Continuous Drain, ID)
- Low On-Resistance: 50mΩ (max at VGS = -4.5V)
- Gate Threshold Voltage: -0.7V (typical)
- Fast Switching: Low gate charge (Qg ~ 6.5nC)
- Package: SOT-23 (Compact surface-mount)
- Applications: Power management, load switching, battery protection
Designed for efficiency in portable and low-voltage systems.

Pinout

The SI2309CDS-T1-E3 is a P-channel MOSFET in a SOT-23-3 package with 3 pins:
1. Gate (G) – Controls the MOSFET's switching.
2. Source (S) – Connected to the power supply (higher voltage for P-channel).
3. Drain (D) – Connects to the load.
Key Features:
- Voltage Rating: -20V
- Current Rating: -3.7A (continuous)
- Low RDS(on): ~50mΩ (at VGS = -4.5V)
- Logic-Level Gate Drive (suitable for 3V/5V control).
Common Applications:
- Power switching
- Load control
- Battery management
Compact and efficient for low-voltage circuits.

Application

The SI2309CDS-T1-E3 is a P-channel MOSFET commonly used in:
1. Power Management – Voltage regulation, load switching in portable devices.
2. Battery Protection – Reverse polarity and overcurrent protection.
3. DC-DC Converters – Efficient power conversion in compact circuits.
4. Portable Electronics – Smartphones, tablets, and wearables for power control.
5. Automotive Systems – Low-voltage applications like infotainment and lighting.
Its small SOT-23 package and low on-resistance make it ideal for space-constrained, energy-efficient designs.

Package

The SI2309CDS-T1-E3 is a P-channel MOSFET in a SOT-23-3 surface-mount package. It is compact, suitable for space-constrained applications, and features three pins for gate, source, and drain connections. The package is industry-standard, offering reliable performance for low-power switching.

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