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SI2312BDS-T1-E3
+StücklisteMOSFET N-CH 20V 3.9A SOT23-3
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HerstellerVishay Siliconix
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Herstellerteil #SI2312BDS-T1-E3
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Datenblatt SI2312BDS-T1-E3 DataSheet
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Paket SOT-23
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Auf Lager5515
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Spezifikationen
| Attribut | Wert |
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | TrenchFET® |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 20 V |
| Current-ContinuousDrain(Id)@25°C | 3.9A (Ta) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 1.8V, 4.5V |
| RdsOn(Max)@IdVgs | 31mOhm @ 5A, 4.5V |
| Vgs(th)(Max)@Id | 850mV @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 12 nC @ 4.5 V |
| Vgs(Max) | ±8V |
| PowerDissipation(Max) | 750mW (Ta) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | SOT-23-3 (TO-236) |
Übersicht
Description
- Low On-Resistance (RDS(on)): 30 mΩ (max) at 4.5V VGS, reducing conduction losses.
- Low Gate Charge (Qg): Enhances switching efficiency.
- Voltage Rating: 20V drain-to-source (VDS), suitable for low-voltage DC/DC converters, load switches, and battery protection.
- Small Package: SOT-23 (3-pin), ideal for space-constrained designs.
- Logic-Level Gate Drive: Operates at 2.5V VGS, compatible with microcontrollers.
Common applications include power supplies, motor control, and portable electronics. Its balance of performance and compact size makes it a versatile choice for energy-efficient designs.
For detailed specs, refer to the datasheet.
Equivalent
- AO3401 (AOS)
- DMG2305UX (Diodes Inc.)
- IRLML6402 (Infineon)
- FDC5612P (Fairchild/ON Semi)
These alternatives offer similar specs (e.g., -20V, -4.3A, low RDS(on)). Verify pinout and electrical characteristics for compatibility.
Features
- Voltage Rating: 20V (VDSS)
- Current Rating: 6.5A (ID)
- Low On-Resistance: 30mΩ (max) @ VGS = 4.5V
- Gate Threshold Voltage: 0.65V (typ)
- Fast Switching: Low gate charge (Qg = 8.5nC typ)
- Package: SOT-23 (Compact, surface-mount)
- Applications: Power management, load switching, DC-DC converters
Designed for high efficiency and low power loss, it’s ideal for portable electronics and battery-powered devices.
Pinout
1. Gate (G) – Controls the MOSFET's switching.
2. Source (S) – Connected to the input voltage (P-channel).
3. Drain (D) – Output connection.
Key Features:
- -20V drain-source voltage (VDS)
- -4.3A continuous drain current (ID)
- Low on-resistance (RDS(on)) for efficient power switching.
Commonly used in load switching, power management, and battery protection circuits.
Manufacturer
Vishay is known for producing high-performance discrete semiconductors, including MOSFETs, diodes, and optoelectronics, as well as resistors, capacitors, and inductors. The company serves industries like automotive, industrial, computing, and consumer electronics.
The SI2312BDS-T1-E3 is a N-channel MOSFET designed for power management in compact, high-efficiency applications.
Application
1. Power Management – Voltage regulation, load switching in portable devices.
2. Battery Protection – Reverse polarity and overcurrent protection.
3. DC-DC Converters – Efficient power conversion in compact designs.
4. Motor Control – Small motor drivers in consumer electronics.
5. LED Drivers – Switching control for lighting systems.
Its low on-resistance and compact SOT-23 package make it ideal for space-constrained, energy-efficient applications.
